Allicdata Part #: | 497-12702-5-ND |
Manufacturer Part#: |
STU85N3LH5 |
Price: | $ 1.17 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 80A IPAK |
More Detail: | N-Channel 30V 80A (Tc) 70W (Tc) Through Hole I-PAK |
DataSheet: | STU85N3LH5 Datasheet/PDF |
Quantity: | 30 |
1 +: | $ 1.06470 |
75 +: | $ 0.85201 |
150 +: | $ 0.74550 |
525 +: | $ 0.57815 |
1050 +: | $ 0.45644 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1850pF @ 25V |
Vgs (Max): | ±22V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 5V |
Series: | STripFET™ V |
Rds On (Max) @ Id, Vgs: | 5.4 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STU85N3LH5 is a type of single semiconductor device known as a field-effect transistor (FET). FETs are a type of transistor commonly used for amplifying or switching electronic signals. STU85N3LH5 is a metal oxide semiconductor FET (MOSFET), and is frequently used in various electronic circuits as a switch that can regulate the flow of electricity through a circuit.
The STU85N3LH5 is designed to operate with a small gate voltage and draw very low current. It is also designed to withstand higher power levels, which makes it suitable for a wide range of applications.
At the heart of a STU85N3LH5 FET are two regions that are separated by an insulating layer called the gate. The regions are the drain and the source. The gate electrode lies between the source and drain and has the ability to control the flow of electrons between them. The gate is electrically insulated from the source and drain, making it an extremely efficient electronic component.
When a voltage is applied to the gate, it creates an electric field which acts like a barrier to the flow of electrons. This electric field is known as a “barrier potential” and is responsible for controlling the current flow between the source and the drain. The higher the barrier potential, the greater the current flow and the lower the barrier potential, the lower the current flow.
The working principle of the STU85N3LH5 is simple but effective. When the gate voltage is low, the barrier potential is also low. This prevents electrons from passing through the gate and between the source and the drain. When the gate voltage is increased, it raises the barrier potential and allows electrons to pass through the gate between the source and the drain, allowing current to flow. In this way, the STU85N3LH5 acts as an efficient switch in controlling the flow of current.
The STU85N3LH5 can be used in many applications, such as digital logic switching, transistors in stepper motors, power supplies, voltage regulators and many others. Due to its low power consumption and its ability to operate with small gate voltages, the STU85N3LH5 is an ideal choice for a wide range of applications. Its high switching speed and low voltage drop also make it an excellent choice for many other electronic applications.
In summary, the STU85N3LH5 is a type of single semiconductor device known as a field effect transistor (FET). Due to its low power consumption, high switching speed and low voltage drop capabilities, it can be used in a variety of applications. The STU85N3LH5 operates by applying a voltage to the gate and controlling the current flow between the source and the drain, thus creating an efficient switch. As such, it is an ideal choice for many electronic applications.
The specific data is subject to PDF, and the above content is for reference
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