SUD35N05-26L-E3 Allicdata Electronics

SUD35N05-26L-E3 Discrete Semiconductor Products

Allicdata Part #:

SUD35N05-26L-E3TR-ND

Manufacturer Part#:

SUD35N05-26L-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 55V 35A TO252
More Detail: N-Channel 55V 35A (Tc) 7.5W (Ta), 50W (Tc) Surface...
DataSheet: SUD35N05-26L-E3 datasheetSUD35N05-26L-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 7.5W (Ta), 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 885pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SUD35N05-26L-E3 is a single n-channel low on-resistance MOSFET (metal oxide semiconductor field effect transistor) with ESD protection, RoHS compliant packaging, and low profile surface mount. This versatile, high-performance MOSFET has a wide range of applications and is suitable for any design having considerable power handling requirements and demanding high reliability.

The SUD35N05-26L-E3 has an Rds(on) of 26mΩ in the SO-8 package and can be used in a variety of applications such as digital circuit protection, power converters, and DC-DC converters. The maximum channel temperature is 125°C and the maximum PWM frequency is 1MHz. The device is rated for up to 8A drain current, 40V drain source voltage, and 14V gate source voltage. The Surge Current Rating is 110A (single pulse).

The working principle of a MOSFET is relatively simple. MOSFETs are voltage-controlled devices, meaning that by applying a voltage to the gate electrode, a current can be controlled at the drain terminal. The magnitude of the current is dependent on the applied voltage and the structure of the transistor. When a voltage is applied, a transverse electric field forms at the interface between the gate and the rest of the transistor. This field creates a barrier that controls the amount of charge carriers (electrons and/or holes) passing through the transistor. The amount of current that is passed therefore depends on the magnitude of the applied voltage.

The application of the SUD35N05-26L-E3 is mainly used for DC-DC converters and low side switches. As a low side switch, it can be used to switch between a high and low power source, which is a major application in switching power supplies. As a DC-DC converter, it can be used to boost the power of a low voltage supply to a higher one, providing more power to the connected device while using low energy consumption.

The SUD35N05-26L-E3 MOSFET is used in many industrial and consumer applications. It is commonly used in automotive electronics such as power seat control, engine control, and infotainment systems. It can also be used in LED backlight drivers, power grids, mobile power management, and power management within portable devices such as cellphones and laptops.

In summary, the SUD35N05-26L-E3 MOSFET is a single n-channel low on-resistance device with ESD protection, high performance, and low profile surface mount packages. Its wide range of applications includes digital circuit protection, power converters, and DC-DC converters. It can be used in automotive applications, LED backlight drivers, power grids, mobile power management, and in portable devices such as cellphones and laptops.

The specific data is subject to PDF, and the above content is for reference

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