SUD35N10-26P-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SUD35N10-26P-GE3TR-ND |
Manufacturer Part#: |
SUD35N10-26P-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 35A DPAK |
More Detail: | N-Channel 100V 35A (Tc) 8.3W (Ta), 83W (Tc) Surfac... |
DataSheet: | SUD35N10-26P-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 8.3W (Ta), 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 7V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SUD35N10-26P-GE3 is a single N-channel MOSFET from NXP Semiconductors. It is a common-source high-voltage power MOSFET which is suitable for use in medium power, high-voltage applications. It is specifically designed for automotive and industrial applications that require high-performance, efficient power handling.
SUD35N10-26P-GE3 has a small footprint and low on-resistance resulting in excellent power dissipation capability and good EMI immunity. It comes in an 8-lead SOIC package configuration, with a maximum drain-source voltage of 600 V. It includes an integrated gate-to-drain Schottky diode which helps to reduce delays in switching times. The device also has an integrated reversed-bias protection diode which helps to protect against electrical transient pulses in the application circuit.
The SUD35N10-26P-GE3 is widely used in a variety of applications such as motor control, lighting, UPS, relay control, and battery management systems. It provides good performance and power optimization in these applications. The device also has a low on-resistance and low gate charge, making it especially suitable for high-power switching applications.
The working principle of SUD35N10-26P-GE3 is based on the MOSFET phenomenon. When the gate region of the device is positively charged, it acts as an insulator between the drain and source terminals. This prevents current from flowing between the drain and source terminals. When the gate is positively charged, the device is in the "on" state, allowing current to flow between the drain and source terminals.
When the gate region is not positively charged, it acts as a conductor allowing current to flow from one of the terminals, usually from the drain to the source. This results in the device being in the "off" state. The on and off state of the MOSFET can be used to control the flow of current in a circuit.
SUD35N10-26P-GE3 is a reliable and cost-efficient MOSFET which is well suited for applications that require low-power operation and high-performance. It is a great choice for applications that require excellent power handling and efficient switching, as well as ones that require high-voltage operation and reliable used in automotive and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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