Allicdata Part #: | SUD35N10-26P-T4GE3-ND |
Manufacturer Part#: |
SUD35N10-26P-T4GE3 |
Price: | $ 0.76 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 35A TO252 |
More Detail: | N-Channel 100V 35A (Tc) 8.3W (Ta), 83W (Tc) Surfac... |
DataSheet: | SUD35N10-26P-T4GE3 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.68661 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 7V, 10V |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: | 4.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 12V |
FET Feature: | -- |
Power Dissipation (Max): | 8.3W (Ta), 83W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252, (D-Pak) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The powerful SUD35N10-26P-T4GE3 field-effect transistor (FET) makes a great power switch in various applications, primarily because of its advanced enhancement mode and the ability to operate at very high currents and temperatures. This N-Channel MOSFET is a high-speed, low-power switch for use in low-side switching applications and is capable of withstanding very high voltage loads. In this article, we\'ll explore the application field and working principle of the SUD35N10-26P-T4GE3.
The electrical performance of the SUD35N10-26P-T4GE3 makes it ideal for a broad range of applications. It is most commonly found in power supply applications, because its high operating temperature & voltage range, and low power consumption makes it a suitable, reliable power switch. Its power handling capability makes it ideal for use in inverter, switching converters and AC/DC power supplies.
Additionally, the SUD35N10-26P-T4GE3 is well-suited for use as a level shifter, in inductive and resistive switching, and in high-side/low-side gate drive applications. Its low-power consumption makes it a great choice for use in cryogenic applications, as it is able to handle high temperatures and delivers excellent switchable power with minimal power consumption. Similarly, it also makes a great choice for use in medical applications, where its high temperature and low power consumption makes it both reliable and suitable while consuming minimal power.
The working principle of the SUD35N10-26P-T4GE3 is based the MOSFET channel current control. When a gate control voltage is applied to the SUD35N10-26P-T4GE3, an electric field is formed and the electric field strengthens as the voltage increases. This electric field causes the channel region of the MOSFET to become conductive, thus allowing current to flow through the device. By adjusting the gate control voltage, the conductivity of the channel region can be controlled, thus allowing the SUD35N10-26P-T4GE3 to be used as a powerful power switch.
Overall, the SUD35N10-26P-T4GE3 is an excellent power switch for use in a wide range of applications. It is capable of regulating electric fields at high voltages and temperatures, and its low power consumption makes it suitable for use in cryogenic and medical applications where power consumption is an important consideration. Its whisper-quiet operation and reliability also make it ideal for a number of different low-side switching applications.
The specific data is subject to PDF, and the above content is for reference
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