SUD35N10-26P-E3 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4.4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	8.3W (Ta), 83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2000pF @ 12V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	47nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	26 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On):	7V, 10V
Current - Continuous Drain (Id) @ 25°C:	35A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The SUD35N10-26P-E3 is a power MOSFET transistor which belongs to the SUD3 series Single Transistor MOSFETs. This device has a drain current rating of up to 35A and a drain-source breakdown voltage of up to 100V, making it suitable for use in a wide range of applications and power designs.The SUD35N10-26P-E3 is designed to work in harder than average conditions, making it particularly suitable for applications requiring high power handling and control. The device provides excellent voltage control and efficiency under switching applications and can be used in many areas due to its high power throughput capacity and improved response time.The SUD35N10-26P-E3 is made of epitaxial silicon and has a N-channel MOSFET design which allows for quick switching. This design also allows for improved thermal and electrical stability, which reduces the amount of power consumption, making the device more energy efficient.The SUD35N10-26P-E3 is typically used in high power systems which require high voltage control and high efficiency. It is often used in DC-DC converters, high current power supplies, motor controls, and other power conversion applications.The SUD35N10-26P-E3 is a single power MOSFET transistor and works on a principle of drain-source switching. In this state the device allows current flow between the drain and source, but not between the gate and source. This allows effective control of large currents and higher efficiency than usual.There are three important aspects of the SUD35N10-26P-E3 which need to be taken into consideration before its use in any particular application. Firstly, the maximum drain current must be known, as this is the maximum current that the device can safely handle. Secondly, the maximum drain-source voltage must be known, as this determines the maximum voltage which can be delivered safely. Finally, the RDS(ON) resistance must be determined, as this determines the efficiency of the device in the application.In conclusion, the SUD35N10-26P-E3 is a power MOSFET transistor which belongs to the SUD3 series Single Transistor MOSFETs. It is a versatile and powerful device, offering excellent performance and efficiency in a variety of applications. Its design allows for quick switching and improved thermal and electrical stability, making it an ideal choice for high power systems. The device is easy to integrate and can be used to deliver large currents and higher efficiency.

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