SUM60030E-GE3 Discrete Semiconductor Products

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The SUM60030E-GE3 is part of a family of metal-oxide-semiconductor field-effect transistors (MOSFETs), specifically single n-channel enhancement mode ones. It is mainly used for power management in designs where a low on-state resistance and good thermal performance are required. In this article, we will be looking at the SUM60030E-GE3 application field and working principle.

Features of SUM60030E-GE3

The SUM60030E-GE3 is a N-Channel MOSFET with a breakdown voltage of 30V, operating from a drain to source voltage between -20V and +30V. Its nominal on-state resistance is 62.5 milliohm, with a maximum of 200 milliohm. Its gate-source voltage is between -2V and +7V, and its maximum gate-source capacitance is 3300pF. Furthermore, its power dissipation is 8 Watts, while the junction to ambient thermal resistance is 4.05°C/W.

Application Field of SUM60030E-GE3

The low on-state resistance of the SUM60030E-GE3 paired with its good thermal performance makes it suitable for a wide range of applications. These include automotive switch mode power supplies, DC-DC converter power management, and lighting control, to name a few. It is also useful for acting as a switch for load and battery disconnection in similar systems.

As the SUM60030E-GE3 can handle high levels of power, it is well-suited for standby and current limitation applications in car navigation systems and portable consumer electronics. It is also ideal for designs that require a tandem MOS Low-Voltage Interlock configuration.

Working Principle of SUM60030E-GE3

The working principle of the SUM60030E-GE3 is that it attaches a gate voltage to a conduction channel that can then be opened up or closed. Depending on the voltage of the gate and the polarity, the transistor either acts as an insulator or a conductor. If the gate voltage is low, the channel will be blocked, and current will not pass through. If the voltage is high, it will open up the channel, and current will be able to pass, hence turning the transistor on.

When the gate voltage is at its highest, the resistance between the source and drain terminal is at its lowest. The gate voltage can range from few volts to the tens of volts depending on the type of MOSFET used. When voltage is applied to the gate, it generates an electric field that attracts and traps charge carriers, such as electrons, which form the conductive path.

Conclusion

The SUM60030E-GE3 is a single n-channel enhancement mode mosfet and is useful for various types of power management, including automotive switch mode power supplies, DC-DC converters, and more. Its low on-state resistance and good thermal performance make it ideal for use in high-powered applications. Its working principle is that of applying a gate voltage to a conduction channel that can either open or block it, thus allowing or blocking current through.

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