SUM60N10-17-E3 Discrete Semiconductor Products

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The SUM60N10-17-E3 is a single-stage enhancement-mode power MOSFET with a very low “on” resistance. The MOSFET is built in a very rugged, but versatile construction. Design features include low gate-source capacitance and an optimized gate structure.

The SUM60N10-17-E3 is designed primarily for use as an appliance switching device in power supplies, circuit breakers and other high-frequency, high-reliability industrial applications. Some features of the device make it ideal for high speed switching, such as its low gate charge, low gate-to-source-capacitance, low rDS(on) and extremely low input capacitance. The MOSFET device has a maximum drain-source voltage rating of 600 V, making it suitable for use in general purpose current-limiting applications.

The main feature of the SUM60N10-17-E3 is its low on-resistance, which makes it an excellent choice for high current applications. The device also offers very good thermal conductivity, allowing it to easily dissipate large amounts of heat generated during normal operation. Additionally, the SUM60N10-17-E3 has an operating temperature range of -55°C to +175°C, making it suitable for use in a wide range of industrial and consumer applications.

The SUM60N10-17-E3 is a N-Channel MOSFET, meaning it is designed to be used primarily in circuits where the load is connected to the source of the device. When forward biased, the N-Channel MOSFET will allow electrical current to pass from the drain to the source. Conversely, when reverse biased, the device will block the current from passing. This makes the device ideally suited for use in power tools, UPS systems, electric motors, and many other high-power applications.

The working principle of the SUM60N10-17-E3 is very simple. When an electrical current is applied to the gate terminal of the device, electrons flow into the drain region and create an inversion. This causes an electric field, known as an inversion layer, to form between the drain and the source. The flow of electrons through this inversion layer is what allows electrical current to pass through the device.

In addition, the SUM60N10-17-E3 has been designed to be very reliable, even in extreme environments. The device features an extremely low gate-source capacitance which protects it from high frequency noise and vibration. Additionally, the device\'s high breakdown voltage ensures that the device will not fail due to overvoltage events. The SUM60N10-17-E3 also features a thermally activated drain-to-gate coating, which protects the device from excessive heat. Lastly, the MOSFET has a maximum operating temperature rating of +175°C, making it suitable for use in high-temperature applications.

The SUM60N10-17-E3 is an ideal choice for many high power and high frequency Industrial applications. Its low resistance and high breakdown voltage ratings make it well suited for use as an appliance switching device in power supplies, circuit breakers, and other high-power industrial applications. Its wide temperature range, along with its low gate-to-source capacitance and thermally activated drain-to-gate coating make it suitable for industrial use in extreme environments. Overall, the SUM60N10-17-E3 is a robust, reliable, and versatile single-stage power MOSFET, suitable for a wide variety of applications.

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