| Allicdata Part #: | SUM65N20-30-E3TR-ND |
| Manufacturer Part#: |
SUM65N20-30-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 200V 65A D2PAK |
| More Detail: | N-Channel 200V 65A (Tc) 3.75W (Ta), 375W (Tc) Surf... |
| DataSheet: |  SUM65N20-30-E3 Datasheet/PDF |
| Quantity: | 1600 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 (D2Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.75W (Ta), 375W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5100pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 30 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 65A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SUM65N20-30-E3 is a high performance N-Channel enhancement mode MOSFET designed for power applications. It is widely used in applications such as wireless power amplifiers, high-end audio amplifiers, and DC/DC converters. This device features a low on-resistance, allowing for high current handling, and a low threshold voltage, allowing for excellent switching performance.
The SUM65N20-30-E3 is a single transistor device, constructed from a single layer of metal oxide semiconductor. This kind of construction makes the transistor extremely efficient and robust. It also allows for a wide range of applications and features. The device features an integrated self-alignment design, which is used to achieve high performance and reliability.
The MOSFET works by passing electrical current through an insulated gate, which is formed by a thin oxide film. The negative gate terminal is connected to the drain, while the positive gate terminal is connected to the source. When the gate is energized, this creates a "channel" of metal oxide, allowing electrical current to flow through the device. The amount of current that can be passed through the device is determined by the voltage on the gate. When the voltage is increased, more current flows; when the voltage is reduced, less current flows.
The SUM65N20-30-E3 is designed to be used in applications that require high current handling, low on-resistance, and low energy consumption. It is particularly suitable for use in DC/DC converters, high-end audio amplifiers, and power amplifiers for wireless applications. Its low on-resistance allows for higher current handling, while its low energy consumption ensures that it remains efficient. It is also a reliable device, with an innovative self-alignment design that minimizes leakage current and reduces temperature rise.
In conclusion, the SUM65N20-30-E3 is an efficient and reliable single transistor device that is suitable for a wide range of power applications. Its low on-resistance, high current handling, and low energy consumption makes it an ideal choice for use in DC/DC converters, high-end audio amplifiers, and wireless power amplifiers. Its innovative self-alignment design ensures high performance and reliability, making it a popular choice for use in power applications.
The specific data is subject to PDF, and the above content is for reference
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