SUM60N02-3M9P-E3 Discrete Semiconductor Products |
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| Allicdata Part #: | SUM60N02-3M9P-E3TR-ND |
| Manufacturer Part#: |
SUM60N02-3M9P-E3 |
| Price: | $ 1.81 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 20V 60A D2PAK |
| More Detail: | N-Channel 20V 60A (Tc) 3.75W (Ta), 120W (Tc) Surfa... |
| DataSheet: |  SUM60N02-3M9P-E3 Datasheet/PDF |
| Quantity: | 1000 |
| 800 +: | $ 1.65186 |
| Series: | TrenchFET® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 3.9 mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 4.5V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 5950pF @ 10V |
| FET Feature: | -- |
| Power Dissipation (Max): | 3.75W (Ta), 120W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-263 (D2Pak) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The SUM60N02-3M9P-E3 is a field-effect transistor (FET) used for processing and voltage regulation applications. It is an enhancement-mode power field-effect transistor is built with a monolithic junction structure. It is specifically designed to allow for low-power, high-efficiency operation and fast switching speeds, making it an ideal choice for a variety of applications.
Features & Benefits
The major features and benefits of the SUM60N02-3M9P-E3 include:
- Low on-resistance: The low on-resistance characteristic allows for low power loss, which results in high efficiency and improved response times.
- Low capacitance: The device has a low capacitance that prevents current spikes caused by voltage fluctuations and reduces radio-frequency interference (RFI).
- TTL compatible drive: The device is TTL compatible, allowing for easy integration into existing systems.
- Robust design: The device’s robust design allows for it to be used in rugged and harsh environments.
Working Principle
The SUM60N02-3M9P-E3 is an enhancement-mode FET that works using the principles of gate control. The gate terminal is a gate voltage control that regulates the current flow through the FET. When the gate voltage is positive, the FET is turned on, allowing current to flow through. When the gate voltage is negative, the FET is turned off, preventing current from flowing through.
The FET works by allowing a small change in the output voltage versus a large change in the input voltage. This is known as amplification because the FET can increase the voltage of the input signal to a much larger output voltage.
Application Fields
The SUM60N02-3M9P-E3 has a wide range of applications in the electronics and power industries. The device can be used in a variety of applications such as:
- DC-DC power converters
- Voltage regulators
- DC-AC inverters
- Switch mode power supplies (SMPS)
- Lighting applications
- Battery chargers and voltage boost applications
- AC/DC rectifier applications
The device can also be used in other applications such as motor drives, audio amplifiers, and motor speed control. The FET has a wide operating temperature range and can be used in both commercial and military applications.
Conclusion
The SUM60N02-3M9P-E3 is an FET designed for voltage regulation and processing applications. The device has a low on-resistance, low capacitance, and TTL compatible drive allowing for easy integration. Additionally, the FET has a robust design and wide operating temperature range, making it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| SUM60N02-3M9P-E3 | Vishay Silic... | 1.81 $ | 1000 | MOSFET N-CH 20V 60A D2PAK... |
| SUM60030E-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 80V 120A D2PA... |
| SUM60N10-17-E3 | Vishay Silic... | -- | 2400 | MOSFET N-CH 100V 60A D2PA... |
| SUM65N20-30-E3 | Vishay Silic... | -- | 1600 | MOSFET N-CH 200V 65A D2PA... |
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