TK11A45D(STA4,Q,M) Allicdata Electronics
Allicdata Part #:

TK11A45D(STA4QM)-ND

Manufacturer Part#:

TK11A45D(STA4,Q,M)

Price: $ 1.20
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 450V 11A TO-220SIS
More Detail: N-Channel 450V 11A (Ta) 40W (Tc) Through Hole TO-2...
DataSheet: TK11A45D(STA4,Q,M) datasheetTK11A45D(STA4,Q,M) Datasheet/PDF
Quantity: 1000
50 +: $ 1.08499
Stock 1000Can Ship Immediately
$ 1.2
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220SIS
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Series: π-MOSVII
Rds On (Max) @ Id, Vgs: 620 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 450V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The TK11A45D(STA4,Q,M) is a type of field effect transistor (FET) and part of the larger MOSFET family. In particular, it is a single drain field effect transistor, meaning that it has a single terminal from which current flows out at all times.

FETs are special types of transistors, based on the idea of mobility of electrons through materials. In a normal transistor, current is switched by having a voltage change the resistance of the gate. In a FET, the gate voltage instead changes the number of electrons that can flow through the device, meaning that it can be used to control very high currents efficiently.

The TK11A45D(STA4,Q,M) is made with a special construction process, called the double-diffused metal oxide semiconductor process. This process involves the construction of a sub-micron MOS transistor structure, as well as the formation of a very low junction capacitance. This lowers the power consumption of the FET and also increases its switching speed. This makes the FET ideal for applications that require both high power and fast switching.

The gate current flowing through the FET is the driving force that determines its performance. To improve this current flow, the drain is connected to the gate through an internal channel connection. This channel connection allows for a better control of the current, making the FET far more efficient. The control of the current is further improved by the double-diffused metal oxide process.

The FET is most commonly used in power switching applications. It can be used to switch power in a variety of circuits, such as power supply circuits, digital logic circuits, and motor control circuits. The FET\'s high switching speed makes it ideal for these types of applications, as it allows for a faster response time and thus more efficient operation. In addition, the FET is also used in amplifiers and other small-power applications.

The TK11A45D(STA4,Q,M) is a versatile and powerful single drain field effect transistor. Its construction gives it a high switching speed and excellent efficiency, making it ideal for power switching applications. Its low power consumption also makes it suitable for amplifiers and other small-power applications. In short, the FET is a great choice for any application that requires a high level of control over the power flow.

The specific data is subject to PDF, and the above content is for reference

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