TK11A65W,S5X

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The TK11A65W,S5X is a type of single MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device. It is a voltage-controlled three-terminal device that controls current between a source terminal and a drain terminal; the current flow is controlled by another terminal known as the gate. MOSFETs come in two basic types: N-channel and P-channel. The TK11A65W,S5X is an N-channel MOSFET.A MOSFET functions by the voltage at its gate controlling the current between the source and drain terminals by modulating the width of the electrical channel created by the gate oxide layer. The channel is made wide by positive gate voltage, causing current to flow between the source and drain terminals, thus making the gate current flow. The channel is narrowed by making the gate voltage negative, causing current between the source and drain terminals to be inhibited.The TK11A65W,S5X is a single, low-power MOSFET device. It has a maximum drain source voltage of 65V, a maximum drain to gate voltage of 25V, a maximum gate current of 20mA and a maximum power dissipation of 700mW. It is an ideal choice for the low-power applications such as switch mode power supplies, DC-DC Converters, high-efficiency motor drives, and light dimmers.The TK11A65W,S5X is available as a surface mount package and is suitable for a wide range of temperature ratings. It has a low RDS(on) (drain-to-source resistance) of 47mΩ at 4.5V, which makes it very efficient when switching current. It is a cost-effective solution for low-power systems.In summary, the TK11A65W,S5X is a single, low-power MOSFET device designed for low-power applications. It has a low RDS(on) resistance and wide range of temperature ratings, which make it a great choice for designing efficient low-power systems.

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