Allicdata Part #: | TK11A50D(STA4QM)-ND |
Manufacturer Part#: |
TK11A50D(STA4,Q,M) |
Price: | $ 1.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 500V 11A TO-220SIS |
More Detail: | N-Channel 500V 11A (Ta) 45W (Tc) Through Hole TO-2... |
DataSheet: | TK11A50D(STA4,Q,M) Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.26239 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Series: | π-MOSVII |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK11A50D (STA4, Q, M) is a MOSFET transistors designed for various applications. As a single circuit, it is composed of four MOSFETs and can easily be used for switching, power supply, etc. It has enhanced characteristics such as low on-state resistance, wide safe operating area, high switching speed and low power consumption. In this article, we are going to discuss the application field of the TK11A50D (STA4, Q, M) and its working principle.
Application Field of TK11A50D (STA4, Q, M)
The TK11A50D (STA4, Q, M) is used in various applications such as automotive, computer systems, audio and power supply applications. It can also be used in systems that require high switching speeds and low power consumption. This MOSFET transistor is also used in power conversion applications such as AC inverters, DC/DC converters, DC/AC converters, and variable-frequency/speed drives.
The features that make the TK11A50D (STA4, Q, M) such a good choice for these applications include low on-state resistance, wide safe operating area, high switching speed and low power consumption. Furthermore, this MOSFET transistor has a compact size, which makes it ideal for applications where the space is limited. The TK11A50D (STA4, Q, M) also offers flexibility, with its adjustable voltage ratings and its wide range of drive current levels.
Working Principle of TK11A50D (STA4, Q, M)
The TK11A50D (STA4, Q, M) is composed of four MOSFETs interconnected in series by bonding them on the same chip. This allows for easy and fast switching of current. The TK11A50D (STA4, Q, M) works through a three-phase power supply, allowing for both AC and DC voltages. Each MOSFET transistor gates a voltage corresponding to the respective phase. The three MOSFETS in series will form a voltage amplifier that shifts the voltage of the current between low and high and vice versa.
In order to switch the current with the TK11A50D (STA4, Q, M), the input current is first given to the drain of the MOSFET. The input current is then amplified and shifted to the output by the two MOSFETs acting in parallel. The output current is then fed to the other two MOSFETs in series, which will then amplify the output current and again switch it back to the input.
The MOSFETs in the TK11A50D (STA4, Q, M) can also provide additional protection for the circuit. The MOSFETs can act as a voltage regulator and a current limiter, protecting the circuit from any over-voltage or over-current conditions.
Conclusion
The TK11A50D (STA4, Q, M) is a MOSFET transistor designed for various applications. It offers enhanced features such as low on-state resistance, wide safe operating area, high switching speed and low power consumption, which makes it suitable for automotive, computer systems, audio, and power conversion applications. The TK11A50D (STA4, Q, M) works through a three-phase power supply and is composed of four MOSFETs in series. This allows for easy and fast switching of current and also provides additional protection for the circuit.
The specific data is subject to PDF, and the above content is for reference
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