TK11P65W,RQ Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3.5V @ 450µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	100W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	890pF @ 300V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	25nC @ 10V
Series:	DTMOSIV
Rds On (Max) @ Id, Vgs:	440 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	11.1A (Ta)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

TK11P65W,RQ is what called a surface-mount MOSFET, which is also known as a Metal Oxide Semiconductor Field Effect Transistor. It is a three-terminal device specialty used for switching or amplifying electrical signals. In this report, the application field and working principle of TK11P65W,RQ will be explored.

Application Field

TK11P65W,RQ is especially designed to be used in PWM, a type of switching that is used in many electronic devices and systems. This is done primarily to control the speed of a motor, efficient lighting, and computer power supplies. It works as a switch to quickly and effectively switch between on and off states, giving it great flexibility and potential in electronic applications. TK11P65W,RQ device can be found in several other applications such as providing gate drive to IGBTs, powering servo motors and other "smart" devices, and providing energy-efficiency voltage regulation. It is also used in control systems in the industrial environment, often to provide control signals. Its ability to accurately switch between on and off states makes it ideal for these sorts of applications.

Working Principle

In basic terms, the internal electromechanical physical operation of the TK11P65W,RQ device is quite simple. The two primary terminals of the device are the source and the drain. When voltage is applied to the source, it causes a current flow from the source to the drain. This current is electronically "controlled" because there is an insulating channel between them. This channel is known as the gate, and when the gate is heavily charged, it acts as a barrier, blocking current flow and thus switching the device off. When the device is turned on, the gate receives a lesser charge and the insulating barrier is removed, allowing current to flow. As previously mentioned, the TK11P65W,RQ is a three-terminal device. The third terminal, known as the body, is connected to the source terminal, as well as the silicon substrate. This connection is employed to provide what is known as "bulk" or source protection for the device. This increased protecting mechanism allows for higher current flow and faster switching cycles, making it ideal for high-frequency applications.

Conclusion

The TK11P65W,RQ device is a powerful three-terminal MOSFET device, designed primarily for its ability to switch rapidly and accurately between on and off states. It is often used to control the speed of motors and to provide energy-efficiency voltage regulation. It can be found in many electronic control systems, such as those found in the industrial environment. Its main operation principle involves the "control" of current flow between two primary terminals, the source and the drain, through an insulating channel known as the gate.

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