Allicdata Part #: | TK13A45D(STA4QM)-ND |
Manufacturer Part#: |
TK13A45D(STA4,Q,M) |
Price: | $ 1.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 450V 13A TO-220SIS |
More Detail: | N-Channel 450V 13A (Ta) 45W (Tc) Through Hole TO-2... |
DataSheet: | TK13A45D(STA4,Q,M) Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.44182 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1350pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | π-MOSVII |
Rds On (Max) @ Id, Vgs: | 460 mOhm @ 6.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Ta) |
Drain to Source Voltage (Vdss): | 450V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK13A45D (STA4, Q, M) is a N-channel enhancement mode MOSFET (metal-oxide-semiconductor field-effect transistor) designed for use in a wide range of applications. It is used as an electronic switch to control the power supply of electrical and electronic circuits. The MOSFET operates in two states, either on or off, allowing it to be used as a high-speed switch. The TK13A45D has a maximum safe operating temperature range of -45°C to 125°C, making it suitable for many applications.
The TK13A45D is most commonly used in applications such as power supply and amplifier circuits, as well as circuits that need to be switched on and off quickly. It can also be used in motor control, current sensing, and pulse-width modulation (PWM) applications. In these applications, the use of the TK13A45D ensures a high level of reliability and control.
The working principle of the MOSFET is relatively straightforward. The transistor has three terminals: the gate, the source, and the drain. Applying a voltage to the gate terminal creates an electric field between the source and the drain, creating a channel for current to flow. The amount of current that flows through the channel is determined by the voltage applied to the gate terminal. By controlling the voltage applied to the gate, the current can be controlled, allowing the switch to be turned on or off.
The TK13A45D has an on-resistance (Rdson) of only 3 Ω, which is one of the lowest available. This low on-resistance helps to reduce the power wasted by the MOSFET, making it more efficient. Another advantage is the low input capacitance, which helps improve the switching speed of the transistor. The TK13A45D has a minimum break-down voltage of ±20 V, which allows it to be used in higher voltage circuits.
The TK13A45D is a highly reliable and efficient MOSFET and is suitable for a wide range of applications. It can be used as an electronic switch to control the power supply of electrical and electronic circuits. With its low on-resistance, low input capacitance, and high break-down voltage, the TK13A45D is a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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