Allicdata Part #: | TK13A65U(STA4QM)-ND |
Manufacturer Part#: |
TK13A65U(STA4,Q,M) |
Price: | $ 2.63 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 650V 13A TO-220SIS |
More Detail: | N-Channel 650V 13A (Ta) 40W (Tc) Through Hole TO-2... |
DataSheet: | TK13A65U(STA4,Q,M) Datasheet/PDF |
Quantity: | 1657 |
1 +: | $ 2.39400 |
10 +: | $ 2.13570 |
100 +: | $ 1.75108 |
500 +: | $ 1.41796 |
1000 +: | $ 1.19586 |
Series: | DTMOSII |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 6.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 950pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 40W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220SIS |
Package / Case: | TO-220-3 Full Pack |
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The TK13A65U (STA4,Q,M) is a power transistor that belongs to the Transistors - FETs, MOSFETs - Single family. It is a type of transistor commonly used in the industry for a wide variety of applications due to its ability to switch quickly, making it a key component in many electrical applications.
The main feature of the TK13A65U is its ability to dissipate a high amount of power, making it suitable for applications involving high currents such as motor control, power converters, and switch mode power supplies. Additionally, the TK13A65U is composed of two silicon layers that are manufactured into a hermetic package, providing enhanced protection and long service life.
In terms of its working principle, the TK13A65U utilizes a special type of FET known as an Enhancement-mode Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). This type of FET is constructed as an enhancement-mode device, meaning that its drain-source current increases with the increase of applied gate voltage.
The way it works is that the drain terminal is connected to the anode of a p-channel MOSFET, with the source and the gate terminals connected to the gate of the MOSFET. When a positive voltage is applied to the gate terminal, it causes the channel between the drain and the source to be opened and closed, thus allowing or blocking the current flow between the anode and the cathode.
Because of its high power dissipation and efficient feedback mechanisms, the TK13A65U is an excellent choice for high current applications such as motor control, power converters, and switch mode power supplies. Furthermore, its hermetic package provides enhanced protection, making it more reliable in harsh conditions.
The range of applications for the TK13A65U transistor extends beyond high current switch applications. It is also used in audio amplifiers and radio frequency (RF) systems, where it can be utilized as a power switching device. Additionally, it is commonly used in inverter circuits, where its low on-resistance provides fast switching times, allowing for the rapid on/off switching of the inverter.
In summary, the TK13A65U (STA4,Q,M) is a type of power transistor belonging to the Transistors - FETs, MOSFETs - Single family. It is composed of two silicon layers and is packaged in a hermetic package, providing enhanced protection against environmental factors. Its high power dissipation and efficient feedback mechanisms make it suitable for a variety of high current applications, including motor control, power converters, switch mode power supplies, audio amplifiers, RF systems, and inverter circuits. The TK13A65U can be a highly reliable and cost-effective solution to many power switching applications.
The specific data is subject to PDF, and the above content is for reference
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