TK13A50DA(STA4,Q,M Allicdata Electronics
Allicdata Part #:

TK13A50DA(STA4QM-ND

Manufacturer Part#:

TK13A50DA(STA4,Q,M

Price: $ 1.76
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 500V 12.5A TO-220SIS
More Detail: N-Channel 500V 12.5A (Ta) 45W (Tc) Through Hole TO...
DataSheet: TK13A50DA(STA4,Q,M datasheetTK13A50DA(STA4,Q,M Datasheet/PDF
Quantity: 1000
50 +: $ 1.58306
Stock 1000Can Ship Immediately
$ 1.76
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220SIS
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Series: π-MOSVII
Rds On (Max) @ Id, Vgs: 470 mOhm @ 6.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The TK13A50DA device is part of STMicroelectronics STAC4 family of N-channel MOSFETs. This device has a wide range of applications including power management, switch mode power supplies, and high frequency switching up to 8.8 MHz. It is also an ideal solution for any general purpose power supply, motor control, and load switching applications where low power is key.

The TK13A50DA is a N-channel enhancement-mode (normally-off) MOSFET with a die size of 0.175mm. It has a low on-state resistance (Rds(on)) of 130 mOhm and a maximum forward drain source voltage (VDS) of 20V. It can handle up to 3.3A and consumes an extremely low gate-source voltage of 1.5V.

This device also offers fast switching times with a turn-on time of 3.5µs and a turn-off time of 2µs. It also offers excellent noise immunity with a maximum gate-source capacitance of 11µF and gate-drain capacitance of 5.9µF. This makes it an excellent choice for switching in noisy environments.

The working principle of the TK13A50DA MOSFET is simple. When a voltage is applied across the gate and source of the MOSFET, a channel of electrons is formed in the N-region. This channel then enables the flow of electrons from the source to the drain due to the applied electric field. By controlling the voltage applied to the gate, the flow of electrons can be controlled.

The TK13A50DA is a single drain-cell MOSFET, meaning that there is only one drain cell connected between the source and the drain. This makes the device ideal for low power applications such as switching. It is also well suited for applications that require high part-to-part repeatability, as the TK13A50DA is designed with very strict tolerance to variations in channel dimensions.

The TK13A50DA MOSFET is an excellent choice for applications where low power is the primary focus. Additionally, its high switching speed, low on-resistance, and high noise immunity make it ideal for powering high-frequency switching operations. It is also well suited for switch mode power supplies, power management applications, and any other general purpose power supply applications.

The specific data is subject to PDF, and the above content is for reference

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