Allicdata Part #: | TK13A50DA(STA4QM-ND |
Manufacturer Part#: |
TK13A50DA(STA4,Q,M |
Price: | $ 1.76 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 500V 12.5A TO-220SIS |
More Detail: | N-Channel 500V 12.5A (Ta) 45W (Tc) Through Hole TO... |
DataSheet: | TK13A50DA(STA4,Q,M Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.58306 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1550pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Series: | π-MOSVII |
Rds On (Max) @ Id, Vgs: | 470 mOhm @ 6.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12.5A (Ta) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK13A50DA device is part of STMicroelectronics STAC4 family of N-channel MOSFETs. This device has a wide range of applications including power management, switch mode power supplies, and high frequency switching up to 8.8 MHz. It is also an ideal solution for any general purpose power supply, motor control, and load switching applications where low power is key.
The TK13A50DA is a N-channel enhancement-mode (normally-off) MOSFET with a die size of 0.175mm. It has a low on-state resistance (Rds(on)) of 130 mOhm and a maximum forward drain source voltage (VDS) of 20V. It can handle up to 3.3A and consumes an extremely low gate-source voltage of 1.5V.
This device also offers fast switching times with a turn-on time of 3.5µs and a turn-off time of 2µs. It also offers excellent noise immunity with a maximum gate-source capacitance of 11µF and gate-drain capacitance of 5.9µF. This makes it an excellent choice for switching in noisy environments.
The working principle of the TK13A50DA MOSFET is simple. When a voltage is applied across the gate and source of the MOSFET, a channel of electrons is formed in the N-region. This channel then enables the flow of electrons from the source to the drain due to the applied electric field. By controlling the voltage applied to the gate, the flow of electrons can be controlled.
The TK13A50DA is a single drain-cell MOSFET, meaning that there is only one drain cell connected between the source and the drain. This makes the device ideal for low power applications such as switching. It is also well suited for applications that require high part-to-part repeatability, as the TK13A50DA is designed with very strict tolerance to variations in channel dimensions.
The TK13A50DA MOSFET is an excellent choice for applications where low power is the primary focus. Additionally, its high switching speed, low on-resistance, and high noise immunity make it ideal for powering high-frequency switching operations. It is also well suited for switch mode power supplies, power management applications, and any other general purpose power supply applications.
The specific data is subject to PDF, and the above content is for reference
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