Allicdata Part #: | TK13A50D(STA4QM)-ND |
Manufacturer Part#: |
TK13A50D(STA4,Q,M) |
Price: | $ 1.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 500V 13A TO-220SIS |
More Detail: | N-Channel 500V 13A (Ta) 45W (Tc) Through Hole TO-2... |
DataSheet: | TK13A50D(STA4,Q,M) Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.77320 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | π-MOSVII |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 6.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Ta) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK13A50D (STA4,Q,M) is a single FET manufactured by Toshiba, which is mainly used in many applications like power management, automotive instrumentation, and industrial automation. It is a JFET type transistor and is used for power switching and signal modulation. This device has a good drain current-to-gate voltage transfer characteristic, making it suitable for applications with high frequency switching.
The main advantages of the TK13A50D are its low on-resistance, high frequency capability, and low gate-to-drain capacitance. This device is ideal for processes with fast rise and fall times. The device has a very low leakage current and can be used in sensitive circuits that require a lower current to load a signal without saturating other components.
The TK13A50D is composed of a N-channel FET structure, which makes it simpler and smaller than other transistors. It also has a very low gate leakage, which increases its switching speed. The device comes with various packages and can fit most design requirements. Additionally, it is a good choice for low-cost power applications since it provides a low on-resistance, meaning less power is wasted in the power switch.
The working principle of the TK13A50D is based on the application of a voltage to the gate and the current between the drain and the source. When the gate voltage is negative, electron conduction takes place and a current starts flowing from the source to the drain. This current is called the drain current. The magnitude of this current depends on the amount of gate voltage applied. When the gate voltage is increased, the drain current will increase and the device will be in the cutoff state.
In order to switch the device on and off at different times, the gate voltage can be modulated. When the gate voltage is modulated, the drain current changes accordingly, thus allowing the device to be used as a switch or an amplifier. The gate current is usually very small and can be neglected, which makes the TK13A50D an ideal choice for low-power switching applications.
The TK13A50D is a reliable device and is used in many applications such as power management, automotive instrumentation, and industrial automation. It has a low on-resistance and is suitable for high-frequency switching applications. Furthermore, the gate current is so low that it can be neglected, thereby making the TK13A50D a very popular choice for low-power switching applications.
The specific data is subject to PDF, and the above content is for reference
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