TK35A65W,S5X

Vgs(th) (Max) @ Id:	3.5V @ 2.1mA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220SIS
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4100pF @ 300V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	100nC @ 10V
Series:	DTMOSIV
Rds On (Max) @ Id, Vgs:	80 mOhm @ 17.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	35A (Ta)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The TK35A65W and S5X are two complementary parts that are used in many applications. They are both from the same product family of transistors and can be considered as a simple transistor. They consist of a single MOSFET whose characteristics and performance depend on the physical doping between the drain and the source.

Characteristics of TK35A65W and S5X

The TK35A65W and S5X have very similar characteristics. They both feature a maximum drain-to-source voltage (VDS) of 65 volts, an on drain current (Id) of 35 amps, an off-state drain-source leakage (Idss) of 3 to 6 mA, a reverse gate-source voltage (Vgs) of -15V, and a maximum gate-source voltage (Vgs) of 12V. The TK35A65W has a threshold voltage (Vth) of -2V, an on-state resistance (RDS(ON)) of 0.12 ohms, and a junction-to-case thermal resistance (RthJ-C) of 0.8°C/W. The S5X also has a threshold voltage (Vth) of -2V, an on-state Resistance (RDS(ON)) of 0.13 ohms, and a junction-to-case thermal resistance (RthJ-C) of 0.9°C/W.

Application Fields

The TK35A65W and S5X can be used in many different application fields. They are used in the power management and motor control industry, as well as in automotive, industrial, and medical applications. The TK35A65W is suitable for applications that require high efficiency, low voltage operation, and fast switching. It is often used in high-power applications such as motor controllers and inverters. The S5X is well-suited for applications that require low-current operation and noise immunity. It is often used in communication, medical device, and home appliances.

Working Principle

The TK35A65W and S5X both use the same principle of operation. They are field-effect transistors (FETs) that control the flow of current between the source and the drain. They are controlled by the gate, which is a metal oxide-semiconductor (MOS) structure that is connected to the source and controls the current. When a voltage is applied to the gate, it produces an electric field between the source and the drain. This field modulates the conductance of the channel and allows current to flow between the source and the drain. The current can be controlled by changing the width of the channel and the voltage applied to the gate. The TK35A65W and S5X are both fast switching and efficient transistors that can be used in a variety of applications. They provide control over the current flow between the drain and the source.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description