| Allicdata Part #: | TK35A65W5S5X-ND |
| Manufacturer Part#: |
TK35A65W5,S5X |
| Price: | $ 5.03 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N-CH 650V 35A TO220SIS |
| More Detail: | N-Channel 650V 35A (Ta) 50W (Tc) Through Hole TO-2... |
| DataSheet: |  TK35A65W5,S5X Datasheet/PDF |
| Quantity: | 87 |
| 1 +: | $ 4.56750 |
| 50 +: | $ 3.74283 |
| 100 +: | $ 3.37762 |
| 500 +: | $ 2.82990 |
| 1000 +: | $ 2.46475 |
| Vgs(th) (Max) @ Id: | 4.5V @ 2.1mA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220SIS |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 50W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4100pF @ 300V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 115nC @ 10V |
| Series: | DTMOSIV |
| Rds On (Max) @ Id, Vgs: | 95 mOhm @ 17.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 35A (Ta) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The TK35A65W5S5X is a single N-Channel High Density Power MOSFET designed for general-purpose applications in the industrial and consumer markets. The TK35A65W5S5X is based on advanced MOSFET technology, with very low on-state resistance and very high Frequency Operation. It is especially suitable for applications, where switching speed and other stringent requirements are paramount.
This type of transistor is categorized as a N-Channel MOSFET because the controlled current flows through the channel between the source and drain. It contains a metallic oxide semiconductor (MOS) gate and when voltage applied to the gate it creates an electric field, and this alters the conductivity between the source and drain. This type of transistor is used in applications such as motor control and power conversion.
The TK35A65W5S5X is a power MOSFET that has excellent on-state characteristics. The high current density makes it suitable for various applications, such as switching and power control. Its low on-state voltage drop and high switching speed also makes it suitable for applications like high-power switching and switching power converters. The TK35A65W5S5X also has a very low gate threshold voltage and can be used in low voltage applications, such as battery-powered equipment.
The TK35A65W5S5X is also ideal for use in battery chargers and other applications, where efficiency and reliability are important. It has very low gate-drain capacitance and very good switching energy efficiency, which helps to reduce power consumption. The built-in symmetric protection circuit and self diagnosis functions also help to ensure long device life and superior reliability.
The TK35A65W5S5X is an ideal example of a N-Channel MOSFET, and it can be used in a wide variety of applications. It has a very low on-state voltage drop and can be used in high-power and low-voltage applications. The built-in symmetric protection circuit and self-diagnosis functions also help to improve reliability and ensure long device life.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| TK35A65W5,S5X | Toshiba Semi... | 5.03 $ | 87 | MOSFET N-CH 650V 35A TO22... |
| TK35N65W,S1F | Toshiba Semi... | 5.7 $ | 63 | MOSFET N-CH 650V 35A TO-2... |
| TK35A65W,S5X | Toshiba Semi... | 5.19 $ | 31 | MOSFET N-CH 650V 35A TO-2... |
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