TK35N65W5,S1F

Vgs(th) (Max) @ Id:	4.5V @ 2.1mA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	270W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4100pF @ 300V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	115nC @ 10V
Series:	DTMOSIV
Rds On (Max) @ Id, Vgs:	95 mOhm @ 17.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	35A (Ta)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

The TK35N65W5,S1F is a high voltage N-channel Enhanced Performance and Avalanche-rugged MOSFET designed for use in any application requiring high efficiency, low drain to source capacitance, or low Gate charge. This device is well suited for use as an on/off switch for high speed and low loss application, as well as complimentary and high speed switching circuits. This article will discuss the features and applications of the TK35N65W5,S1F, along with its operating principles and working characteristics.

Characteristics

The TK35N65W5,S1F is a high voltage N-channel Enhanced Performance and Avalanche-rugged MOSFET. This device features a maximum drain current of 35A, and a maximum drain voltage of 650V, as well as a maximum avalanche current of 32A. This device also features an extended operating temperature range between -55°C to +150°C, and a decline in Rds(on) of just 0.034 Ω @ 25°C and 0.041 Ω @ 150°C.

Application Field

The TK35N65W5,S1F is suitable for use as an on/off switch for high speed and low loss applications. This device is well suited for use in any application requiring high efficiency, low drain to source capacitance, or low Gate charge. This device can be used in many applications, such as inductive heating, electric vehicles, AC/DC conversion, power supplies, and power distribution.

Working Principle

The TK35N65W5,S1F features a unique operating principle. It uses an N-channel MOSFET with an enhanced performance and an avalanche-rugged design. This device also features a unique Gate-Source clamp structure and acceleration field effect structure, which enable it to operate with stable and reliable switching performance.When the device is turned on, the N-channel MOSFET will draw a current from the Drain to the Source, thus allowing the current to flow from the Source to the Drain. This causes the voltage drop from the Drain to the Source to decrease, and thus allowing the Gate voltage to rise. This will cause the Gate-Source voltage to increase, thus allowing more current to flow from the Source to the Drain.The N-channel MOSFET will draw current from the Source to the Drain, thus allowing the voltage at the Drain to increase. This will cause the Gate voltage to decrease, thus allowing less current to flow from the Source to the Drain. This process will be repeated until the Gate voltage is equal to the Drain voltage, thus allowing the device to remain in steady state.

Conclusion

The TK35N65W5,S1F is a high voltage N-channel Enhanced Performance and Avalanche-rugged MOSFET designed for use in any application requiring high efficiency, low drain to source capacitance, or low Gate charge. This device is well suited for use as an on/off switch for high speed and low loss application, as well as complimentary and high speed switching circuits. This device features a unique operating principle, utilizing an N-channel MOSFET with an enhanced performance and an avalanche-rugged design. The extended operating temperature range between -55°C to +150°C, and a decline in Rds(on) of just 0.034 Ω @ 25°C and 0.041 Ω @ 150°C make this device highly useful for many applications.

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