TK35S04K3L(T6L1,NQ Allicdata Electronics
Allicdata Part #:

TK35S04K3L(T6L1NQ-ND

Manufacturer Part#:

TK35S04K3L(T6L1,NQ

Price: $ 0.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 40V 35A DPAK-3
More Detail: N-Channel 40V 35A (Ta) 58W (Tc) Surface Mount DPAK...
DataSheet: TK35S04K3L(T6L1,NQ datasheetTK35S04K3L(T6L1,NQ Datasheet/PDF
Quantity: 1000
2000 +: $ 0.37529
Stock 1000Can Ship Immediately
$ 0.41
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK+
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 58W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Series: U-MOSIV
Rds On (Max) @ Id, Vgs: 10.3 mOhm @ 17.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The TK35S04K3L (T6L1,NQ) is a type of transistor, specifically a metal-oxide-semiconductor field-effect transistor (MOSFET). It is classified in the category of transistors and field-effect transistors (FETs) and is a single device.

MOSFET transistors work on the principles of electrostatic induction and conduction across a channel. They controlled the current flowing between two terminals by using electric fields to activate a channel instead of current or heat. This makes them the most efficient and popular type of transistor.

The TK35S04K3L (T6L1,NQ) specifically is an N-Channel Enhancement mode MOSFET. This means that it has two N-type source and drain regions on both sides with a channel connecting them. A gate is placed between these regions and it is subject to a voltage that can shut off or pinch the current.

The features of the TK35S04K3L (T6L1,NQ) make it ideal for many applications, such as audio amplifiers, AC to DC power supply circuits, and switching regulator circuits. It can handle high amounts of current, discharge slowly and offer no saturation at the same time. It also offers low impedance and low on-resistance – two qualities that make it well suited for high speed switching applications.

The working principle of the TK35S04K3L (T6L1,NQ) is relatively simple. A channel is created between the two N-type source and drain regions by applying a voltage to the gate. This voltage is the controlling force that determines how much current will flow between the two ends. When a higher voltage is applied, the current increases and when a lower voltage is applied to the gate, the current decreases.

When the gate receives a positive or negative voltage, it creates a strong electric field in the channel and allows current to flow through it. When the voltage is removed, the electric field is decreased and the current flow is reduced. This is why it is known as an enhancement-mode MOSFET – because it needs an electric field to be activated.

The TK35S04K3L (T6L1,NQ) is an example of a transistor that can be used in a wide variety of applications. It is most commonly used in audio amplifiers, AC to DC power supplies, and switching regulator circuits, but it can be used in many other applications as well. The transistor is well suited for its purpose due to its low impedance, low on-resistance, and ability to handle high current.

The specific data is subject to PDF, and the above content is for reference

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