TK5A53D(STA4,Q,M) Allicdata Electronics
Allicdata Part #:

TK5A53D(STA4QM)-ND

Manufacturer Part#:

TK5A53D(STA4,Q,M)

Price: $ 0.90
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 525V 5A TO-220SIS
More Detail: N-Channel 525V 5A (Ta) 35W (Tc) Through Hole TO-22...
DataSheet: TK5A53D(STA4,Q,M) datasheetTK5A53D(STA4,Q,M) Datasheet/PDF
Quantity: 1000
50 +: $ 0.80338
Stock 1000Can Ship Immediately
$ 0.9
Specifications
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220SIS
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Series: π-MOSVII
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 525V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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A transistor is a three-terminal semiconductor device with a gate, source and drain. The term "transistor" originates from the combination of the words "transistor switch”. Transistors are used in a variety of applications, such as amplifying and frequency controlling signals. Field effect transistors (FETs) are the most common type of transistor used in modern integrated circuits and analog applications. FETs can be classified into surface-mount, planar and three-dimensional transistor structures.

The TK5A53D is a three-terminal semiconductor device developed by Toshiba Semiconductor. This FET has a gate, source and drain as its three terminals, and is categorized as a single FET. It is a surface-mount transistor with a maximum operating temperature of 150°C, and features a 70V drain voltage, 4A drain current and 5mΩ impedance.

TK5A53D can be used for a variety of applications, including load switches and DC-DC converters. When used as load switch, it is usually placed between switch and load, and can control the load current by opening or closing the switch. When used as a DC-DC converter, the FET can provide the necessary amount of current and voltage needed in the circuit through its high frequency switching.

The working principle of the FET is based on the voltage and current at the gate terminal. When a positive voltage is applied to the gate, a conducting channel is formed between the source and the drain, allowing current to flow between the two. When the gate voltage is lowered, the conducting channel is deactivated, resulting in no current flow between the source and the drain. This voltage controlled channel formation process is commonly referred to as the “threshold effect”.

The TK5A53D can also be used in switching applications and as a voltage regulator. In switching applications, the FET is able to convert AC signals into DC signals. This can be useful for switching applications, as the FET can be used to control the input and output voltages of a system. As a voltage regulator, the FET can also be used to monitor and control voltages, allowing the system to operate optimally.

The TK5A53D is also known for its low power dissipation and low on-resistance, which make it ideal for low power applications. Its low switching noise eliminates the need for external noise reduction systems, allowing the system to operate quietly. Its high frequency, low on-resistance and high voltage rating also make it a great choice for high frequency and power. Overall, the TK5A53D is a great FET for a variety of operations.

The specific data is subject to PDF, and the above content is for reference

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