Allicdata Part #: | TK5A60D(STA4QM)-ND |
Manufacturer Part#: |
TK5A60D(STA4,Q,M) |
Price: | $ 1.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 600V 5A TO-220SIS |
More Detail: | N-Channel 600V 5A (Ta) 35W (Tc) Through Hole TO-22... |
DataSheet: | TK5A60D(STA4,Q,M) Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 0.91690 |
Vgs(th) (Max) @ Id: | 4.4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Series: | π-MOSVII |
Rds On (Max) @ Id, Vgs: | 1.43 Ohm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK5A60D is a single MOSFET (metal oxide semiconductor field-effect transistor), belonging to the STA4QM family which is used in a variety of applications. The MOSFET is a voltage-controlled device that can be used to amplify or switch electrical signals. It is also used to convert low-voltage signals into higher-voltage ones. The TK5A60D has a rated drain-source voltage of 60V, a maximum drain current of 4A, and an RDSon of 0.2Ω, making it suitable for a wide range of applications.
MOSFETs are typically used in low-voltage or high-frequency circuits, such as switching power supplies, motor controllers and amplifier circuits. They are also used in power converters and battery management systems. The TK5A60D is suitable for use in these applications due to its low on-resistance and high drain-source voltage rating. The device also has low turn-on and turn-off times, making it suitable for use in high-speed applications. MOSFETs are also used in gate drivers, current sources, and charge pumps.
The working principle of the MOSFET is based on the flow of current through a conductive channel in the transistor. The flow of current is regulated by a gate voltage. Positive gate voltage will turn on the transistor, allowing current to flow between the source and drain terminals. Negative gate voltage will turn off the transistor, preventing the flow of current. The MOSFET\'s low on-resistance and high drain-source voltage rating makes it suited for use in various types of circuits.
MOSFETs are used in various types of applications due to their low on-state resistance, high drain-source voltage rating, low turn-on and turn-off times, and low gate capacitance. The TK5A60D is a single MOSFET suitable for a wide range of applications due to its high drain-source voltage rating, low on-resistance, and low gate capacitance. The device is ideal for use in switching power supplies, motor controllers, amplifier circuits, and other high-frequency and high-speed applications.
The specific data is subject to PDF, and the above content is for reference
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