Allicdata Part #: | TK5A65DA(STA4QM)-ND |
Manufacturer Part#: |
TK5A65DA(STA4,Q,M) |
Price: | $ 1.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 650V 4.5A TO-220SIS |
More Detail: | N-Channel 650V 4.5A (Ta) 35W (Tc) Through Hole TO-... |
DataSheet: | TK5A65DA(STA4,Q,M) Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 0.93101 |
Vgs(th) (Max) @ Id: | 4.4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Series: | π-MOSVII |
Rds On (Max) @ Id, Vgs: | 1.67 Ohm @ 2.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Ta) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK5A65DA is classified as a single MOSFET power transistor. It is a high-current, high-voltage device that is used in applications such as motor control, audio amplifiers, and power supplies. The MOSFET device is made up of four distinct sections: the source, body, drain, and gate. It is important to note that MOSFETs are voltage controlled rather than current controlled. The gate voltage determines the current flowing through the device, making it an efficient way to control the flow of power.
The TK5A65DA is particularly well-suited for applications where high currents are needed, such as motor control circuits, as well as power converters, switching Mode power supplies, and audio amplifiers. The device has a drain-source voltage of 650V and a drain current of 5A. It also has an on-resistance of 0.51 nΩ, making it capable of handling large currents with relatively low power losses.
In terms of its working principle, the TK5A65DA exploits the capability of transistors to conduct or block current. When it is “off”, no current flows, but when it is “on” it allows a current to flow. This change of state is managed by setting the gate voltage, which in the case of the TK5A65DA can range between -20V and +20V. By modulating the voltage fed to the gate, the current flowing through the device can be precisely regulated.
The TK5A65DA is also characterized by a fast switching speed, a low gate charge, and a maximum junction temperature of –55˚C. All of these features make the device suitable for a range of power control applications. For example, it is commonly used for digital-signal processing circuits and in power conversion circuits in video displays.
In conclusion, the TK5A65DA is a single MOSFET power transistor. As such, it is particularly well-suited for applications where high currents are needed. Its working principle involves using transistors to conduct or block current by modulating the voltage fed to the gate. With a drain-source voltage of 650V, drain current of 5A, and an on-resistance of 0.51 nΩ, the TK5A65DA is capable of handling large currents with relatively low power losses.
The specific data is subject to PDF, and the above content is for reference
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