| Allicdata Part #: | TK650A60FS4X-ND |
| Manufacturer Part#: |
TK650A60F,S4X |
| Price: | $ 1.09 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | PB-F POWER MOSFET TRANSISTOR TO- |
| More Detail: | N-Channel 600V 11A (Ta) 45W (Tc) Through Hole TO-2... |
| DataSheet: | TK650A60F,S4X Datasheet/PDF |
| Quantity: | 395 |
| 1 +: | $ 0.98280 |
| 50 +: | $ 0.78712 |
| 100 +: | $ 0.68872 |
| 500 +: | $ 0.53410 |
| 1000 +: | $ 0.42166 |
| Vgs(th) (Max) @ Id: | 4V @ 1.16mA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220SIS |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C |
| Power Dissipation (Max): | 45W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1320pF @ 300V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
| Series: | U-MOSIX |
| Rds On (Max) @ Id, Vgs: | 650 mOhm @ 5.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
TK650A60F, S4X application field and working principle
A MOSFET (metal-oxide semiconductor field-effect transistor) is a type of transistor used primarily in electronic circuits. They are designed to control the flow of electricity in circuits, but can also be used for a wide range of other functions, such as amplifying signals, switching circuits on and off, and storing and releasing energy. The TK650A60F, S4X is a type of MOSFET, or metal-oxide semiconductor field-effect transistor, and is designed for use in a wide range of applications, including but not limited to amplifier circuits, switching devices, and automotive applications.
A MOSFET is an active device that controls electrical current in a circuit using the "field-effect" principle. When a voltage is applied to the gate terminal of a MOSFET, an electric field is created between the gate and the source and drain terminals. This electric field creates an attractive force on the electrons present in the source and drain terminals, allowing them to flow through the device and varying the amount of current that is allowed to pass. This allows the MOSFET to control the current flowing through a circuit by varying the voltage applied to the gate.
The TK650A60F, S4X MOSFET is a trench-type MOSFET with an operating voltage of 600 volts. It is designed for use in automotive applications and can be used to provide power to a variety of devices, such as headlights, interior and exterior lights, and other automotive accessories. It can also be used for switching circuits on and off and for amplifying signals. The device is designed to provide a high level of efficiency and is capable of withstanding large amounts of current, making it well suited for use in a wide range of applications.
The TK650A60F, S4X is a relatively low-cost MOSFET and is typically used in low-power applications. It has a gate capacitance of 40picofarads and an operating temperature range of -40°C to +85°C. This makes it well-suited for use in automotive applications where the environment can be quite harsh. The device is also designed to be compatible with a wide range of automotive control systems and is designed to provide a high level of durability and reliability.
In summary, the TK650A60F, S4X is a MOSFET designed for use in a wide range of applications, including amplifier circuits, switching devices, and automotive applications. It is a relatively low-cost device and is capable of withstanding large amounts of current and high temperatures. It is compatible with a wide range of automotive control systems and is designed to provide a high level of durability and reliability.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| TK65E10N1,S1X | Toshiba Semi... | 2.12 $ | 1000 | MOSFET N CH 100V 148A TO2... |
| TK65G10N1,RQ | Toshiba Semi... | 1.04 $ | 1000 | MOSFET N-CH 100V 65A D2PA... |
| TK65025MTL | Toko America... | 0.7 $ | 870 | IC REG BOOST 3V 4MA SOT23... |
| TK65S04N1L,LQ | Toshiba Semi... | 0.63 $ | 2000 | MOSFET N-CH 40V 65A DPAKN... |
| TK650A60F,S4X | Toshiba Semi... | 1.09 $ | 395 | PB-F POWER MOSFET TRANSIS... |
| TK65S04K3L(T6L1,NQ | Toshiba Semi... | 0.57 $ | 1000 | MOSFET N-CH 40V 65A DPAK-... |
| TK65A10N1,S4X | Toshiba Semi... | 2.23 $ | 100 | MOSFET N-CH 100V 65A TO-2... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...
TK650A60F,S4X Datasheet/PDF