Allicdata Part #: | TK65E10N1S1X-ND |
Manufacturer Part#: |
TK65E10N1,S1X |
Price: | $ 2.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N CH 100V 148A TO220 |
More Detail: | N-Channel 100V 148A (Ta) 192W (Tc) Through Hole TO... |
DataSheet: | TK65E10N1,S1X Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 1.92780 |
50 +: | $ 1.55408 |
100 +: | $ 1.39866 |
500 +: | $ 1.08783 |
1000 +: | $ 0.90136 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 192W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5400pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 81nC @ 10V |
Series: | U-MOSVIII-H |
Rds On (Max) @ Id, Vgs: | 4.8 mOhm @ 32.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 148A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK65E10N1,S1X is a single-channel enhancement-mode power MOSFET from Toshiba, released in October 2019. This MOSFET has an RDSon rating of 8.5mΩ and can handle a maximum drain current of 65A. Its main application fields include power management and switching applications.
The construction of an enhancement-mode power MOSFET is fundamentally different from that of an ordinary MOSFET. In an ordinary MOSFET, the Gate-Source voltage is applied to the device, which in turn “enhances” the conduction characteristics of the channel by polarizing the Drain and Source. This is the fundamental idea behind enhancement-mode.
In a power MOSFET, the physical structure of the device has been modified to reduce the threshold and allow it to be turned on at lower Gate-Source voltages. This is accomplished by connecting the Gate of the device directly to the Source. This connection polarizes the Drain and Source, thereby allowing it to switch on at the lower Gate-Source voltages.
The RDSon rating of the TK65E10N1,S1X MOSFET indicates how much current it is capable of sustaining when Gate-Source voltage is applied. It also is a measure of how efficiently the device conducts; the higher the RDSon rating, the lower the power loss.
The TK65E10N1,S1X MOSFET is commonly used in power management and switching applications where high current levels are required. It is also used in motor control systems and LED lighting. In motor control systems, this MOSFET is used to switch the power to the motor on and off rapidly, allowing the motor to be controlled accurately. In LED lighting systems, it is used to control the current flow to the LED, allowing for precise regulation of the output current to the LED.
The TK65E10N1,S1X MOSFET is an effective device for many different applications. It is well-suited for use in power management and switching applications and can be used to control power levels to motors and LED lighting systems. Its low RDSon rating allows it to handle a maximum drain current of 65A and efficiently conduct power, meaning less power is wasted in the form of heat.
The specific data is subject to PDF, and the above content is for reference
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