TK65S04N1L,LQ

Vgs(th) (Max) @ Id:	2.5V @ 300µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK+
Mounting Type:	Surface Mount
Operating Temperature:	175°C (TJ)
Power Dissipation (Max):	107W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2550pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	39nC @ 10V
Series:	U-MOSVIII-H
Rds On (Max) @ Id, Vgs:	4.3 mOhm @ 32.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	65A (Ta)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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TK65S04N1L,LQ Application Field and Working Principle

TK65S04N1L,LQ is a type of Transistors - FETs, MOSFETs - single transistors that belongs to the TK family. It is specifically designed for switching applications and has a modest power rating of 65W. It has a voltage rating between 25V and 200V and a maximum drain current rating up to 4A.

It is manufactured using the latest semiconductor process technologies, making it suitable for use in a wide range of applications such as motor control and switching applications. It is also designed to have excellent reliability and durability due to its robust design.

The TK65S04N1L,LQ works on a basic FET (Field Effect Transistor) principle. It uses three electrodes which are the source, gate and drain. The working of the FET is conducted by controlling the electric field in the channel between the source and drain, which in turn controls the current that flows through the channel. When the gate voltage is applied it creates an electric field in the channel that helps in controlling the current flow. The source voltage is routed through the channels and is used to create an electric field in the other direction.

The TK65S04N1L,LQ has a variety of features that make it suitable for its application. It has an enhanced power handling due to its increased number of pins. It also has a low on-resistance that helps in reducing the power consumption and as a result providing improved efficiency. In addition, the FET has a robust temperature compensation circuit which ensures the accurate temperature of the device despite the changing temperature in the environment.

The TK65S04N1L,LQ has a variety of application areas like motor control, switching, and power circuits that generally require an efficient and reliable switching component. The FET operates with very low losses when working with high frequency signals which makes it suitable for telecommunication applications as well. It is also used in many electronic components in automotive and industrial equipment.

The TK65S04N1L,LQ is a powerful and efficient transistor that is perfect for a variety of low and high power switching applications. It is widely used in various industrial and automotive applications due to its excellent characteristics and robust temperature compensation circuit. It provides reliable and efficient performance and is suitable for a variety of dynamic and static switching applications.

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