TK65S04K3L(T6L1,NQ Allicdata Electronics
Allicdata Part #:

TK65S04K3L(T6L1NQ-ND

Manufacturer Part#:

TK65S04K3L(T6L1,NQ

Price: $ 0.57
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 40V 65A DPAK-3
More Detail: N-Channel 40V 65A (Ta) 88W (Tc) Surface Mount DPAK...
DataSheet: TK65S04K3L(T6L1,NQ datasheetTK65S04K3L(T6L1,NQ Datasheet/PDF
Quantity: 1000
2000 +: $ 0.50860
Stock 1000Can Ship Immediately
$ 0.57
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK+
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Series: U-MOSIV
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 32.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The TK65S04K3L (T6L1,NQ) is a type of field-effect transistor (FET), which is a key component in various electrical and electronic components. It is most commonly used in advanced integrated circuits (ICs), digital signal processors (DSPs), and memory modules. In addition, FETs are also used in analog circuits, where they act as switches and amplifiers.

The term FET refers to any type of electronic device that controls the current flow within an electronic circuit. FETs are divided into two main categories: MOSFETs and JFETs. The TK65S04K3L (T6L1,NQ) is a single MOSFET, which means that it is composed of a single transistor and provides a single, variable-gate circuit. The FETs in this range of transistors have an on-resistance of less than 1.0 ohm and a voltage rating of up to 50 volts.

MOSFETs are defined by their “channel,” which is the area between the source and drain electrodes, onto which mobile carriers are released. MOSFETs have three important properties: capacitance, input current, and output resistance. These properties, in combination, control the resistance and voltage across the device and are directly affected by the amount of doping of the silicon and the nature of the channel between the source and drain.

A MOSFET channel is created by the electrical field created by one or more gates. The gate has various functions within an FET, such as controlling the channel’s width, the current flow, and the threshold voltage. This type of FET is known as an enhancement-mode MOSFET, because the gate voltage increases the current flow between the source and drain. The gate also has a drain and a source, each connected to the opposite sides of the channel.

The TK65S04K3L (T6L1,NQ) MOSFET is a high-speed, low-noise device. It is ideal for switch-mode power supplies and other higher-frequency applications. It is suitable for use both as an amplifier and switch, and can be found in devices such as remote-control receivers, automotive electronics, and consumer electronics. The MOSFET can also be used in digital circuits, where it can control the flow of data in addition to voltage.

The TK65S04K3L (T6L1,NQ) MOSFET is a versatile device that is used in a wide variety of applications. It can be used to switch and control AC or DC signals, which makes it ideal for any application that requires a high level of precision and control. These transistors are also low-noise, allowing them to be used in environments such as medical equipment, where noise reduction is an essential requirement. The TK65S04K3L (T6L1,NQ) is an important device in the development and production of many electronic products.

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