Allicdata Part #: | TK6A50D(STA4QM)-ND |
Manufacturer Part#: |
TK6A50D(STA4,Q,M) |
Price: | $ 0.90 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 500V 6A TO-220SIS |
More Detail: | N-Channel 500V 6A (Ta) 35W (Tc) Through Hole TO-22... |
DataSheet: | TK6A50D(STA4,Q,M) Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 0.80338 |
Vgs(th) (Max) @ Id: | 4.4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 540pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | π-MOSVII |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK6A50D is a power MOSFET manufactured by STMicroelectronics. MOSFETs (metal-oxide-semiconductor field-effect transistors) are commonly used in power switching applications, as they have low on-state resistance and high switching speed. The suffix “D” indicates that this particular MOSFET is designed for switching applications and has a drain-source voltage rating of 500 Volts. It is limited to a maximum drain current of 4 Amps and a maximum power dissipation of 4 Watts.
The TK6A50D is designed for use in applications such as motor controls and power supplies. Its low on-state resistance is beneficial in applications where it is important to minimize losses due to heating, as it allows for more power to be transferred within a smaller size, reducing the device’s footprint and improving efficiency. This device is also well-suited for switching applications where fast switching speed is important, such as in motor drives, where a fast response is needed for quick acceleration and deceleration.
The TK6A50D is an N-channel MOSFET, meaning it has an insulated gate which controls the flow of current from the drain to the source. All that is required to turn it on is a voltage differential between its gate and source terminals, which creates an electric field between the gate and the channel. This electric field causes the carriers to be repelled from the gate and allows current to flow between the drain and the source.
When the gate voltage is removed, the electric field dissipates, and the carriers return to the gate, which blocks current flow and turns the device off. The various components of the TK6A50D, such as the drain and source, serve different roles in the operation of the device, while the gate voltage is used to control the operation and turn the device on and off.
The TK6A50D is a great choice for applications that require a device with low on-state resistance and high switching speed. Its features make it ideal for motor drives, power supplies, and other applications that require fast switching.
The specific data is subject to PDF, and the above content is for reference
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