TK6A53D(STA4,Q,M) Allicdata Electronics
Allicdata Part #:

TK6A53D(STA4QM)-ND

Manufacturer Part#:

TK6A53D(STA4,Q,M)

Price: $ 0.97
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 525V 6A TO-220SIS
More Detail: N-Channel 525V 6A (Ta) 35W (Tc) Through Hole TO-22...
DataSheet: TK6A53D(STA4,Q,M) datasheetTK6A53D(STA4,Q,M) Datasheet/PDF
Quantity: 1000
50 +: $ 0.87633
Stock 1000Can Ship Immediately
$ 0.97
Specifications
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220SIS
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Series: π-MOSVII
Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 525V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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A field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of electrons between the source and drain. The TK6A53D (STA4, Q, M) is a type of single-gate metal-oxide-semiconductor field-effect transistor (MOSFET).

A MOSFET is composed of an insulated gate, source, and drain. The source and drain are metal contacts, which are connected to the device, while the gate is insulated from the remainder. When a voltage is applied to the gate, it attracts electrons, allowing current to flow from the source to the drain. Alternatively, when the gate is not energized, current cannot flow.

The TK6A53D (STA4, Q, M) is particularly suited to high-speed switching applications due to its low capacitance and on-resistance values. It has a maximum drain-source voltage of 300V and a maximum total power dissipation of 600mW. Its breakdown voltage is 150V, drain-source on-resistance is 100 ohms, and gate-source on-resistance is 8 ohms.

The TK6A53D (STA4, Q, M) is a widely used device for applications such as high-voltage switching circuits and power supplies. It is also frequently used in telecommunications equipment and computer systems. Additionally, it is widely used as a driver for different types of transistors and integrated circuits (ICs).

The device is commonly used to drive high-current applications. In this context, it is used to switch large amounts of power or enable high-speed switching on a voltage-level. The device can also be used for controlling the speed of motor drives. In this case, PWM (pulse-width modulation) can be used to vary the speed of the motor.

The TK6A53D (STA4, Q, M) is also used in low-noise applications, such as audio amplifier circuits and acoustic guitar systems. It can be used to reduce the noise generated by the amplifier and eliminate any unwanted distortion. The device is also used in combination with other components, such as transformers and capacitors, to form complex audio systems.

In conclusion, the TK6A53D (STA4, Q, M) is a single-gate metal-oxide-semiconductor field-effect transistor (MOSFET) with a range of practical applications. It is particularly suited to high-speed switching applications due to its low capacitance and on-resistance values, and it is commonly used for controlling the speed of motor drives and for low-noise applications, such as audio amplifiers. The device is also often used in combination with other components to form complex audio systems.

The specific data is subject to PDF, and the above content is for reference

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