Allicdata Part #: | TK6A60DSTA4QM-ND |
Manufacturer Part#: |
TK6A60D(STA4,Q,M) |
Price: | $ 1.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 600V 6A TO220SIS |
More Detail: | N-Channel 600V 6A (Ta) 40W (Tc) Through Hole TO-22... |
DataSheet: | TK6A60D(STA4,Q,M) Datasheet/PDF |
Quantity: | 2252 |
1 +: | $ 1.20330 |
10 +: | $ 1.06659 |
100 +: | $ 0.84313 |
500 +: | $ 0.65386 |
1000 +: | $ 0.51621 |
Series: | π-MOSVII |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.25 Ohm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 40W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220SIS |
Package / Case: | TO-220-3 Full Pack |
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A transistor is a semiconductor device made from either three or four layers of semiconductor material. Each layer has an electrical charge, and when an electrical current is applied to it, it is able to control the flow of electricity through the device. Transistors are used in many types of electronic devices to amplify, control and regulate signals and currents. The TK6A60D (STA4,Q,M) is a type of transistor known as a field effect transistor or FET. It is made from three layers of silicon material and is used mainly in power control applications, such as controlling the flow of current in motors or transformers.
The TK6A60D is a type of MOSFET, or metal oxide semiconductor field effect transistor. MOSFETs are transistors that are designed to operate in the frequency range from DC (direct current) to microwave frequencies, which makes them extremely useful for switching and controlling current in devices that require high frequency operation. As a result, they are often used in applications such as motor control, digital logic, and RF amplifiers.
The TK6A60D is a single gate MOSFET, meaning that it has only one gate terminal. This gate terminal is used to control the device by allowing and blocking currents. When the gate voltage is increased, the MOSFET switches from a high impedance (non-conductive) state to a low impedance (conductive) state and allows current to flow through the device. When the gate voltage is decreased, the MOSFET returns to its high impedance state, blocking current and turning off the device.
The TK6A60D is a powerful MOSFET with a drain to source breakdown voltage of 600V and a drain current rating of 63A. It is well-suited to applications that require high power switching and control such as motor control, power supply design and power conversion. It is also commonly used in RF amplifiers, high speed switching and medical electronics. As a result, the TK6A60D is a versatile and reliable FET that can be used for a wide range of different applications.
The specific data is subject to PDF, and the above content is for reference
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