Allicdata Part #: | TK6A60WS4VX-ND |
Manufacturer Part#: |
TK6A60W,S4VX |
Price: | $ 1.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N CH 600V 6.2A TO-220SIS |
More Detail: | N-Channel 600V 6.2A (Ta) 30W (Tc) Through Hole TO-... |
DataSheet: | TK6A60W,S4VX Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.31859 |
Specifications
Vgs(th) (Max) @ Id: | 3.7V @ 310µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 390pF @ 300V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | DTMOSIV |
Rds On (Max) @ Id, Vgs: | 750 mOhm @ 3.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.2A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Description
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TK6A60W,S4VX Application Field and Working Principle
The TK6A60W, S4VX are two types of enhancement-mode MOSFETs (metal-oxide-semiconductor field-effect transistors) that are mainly used in discrete power components. This type of transistor is specialized for high-speed switching because of their particular construction, which features a gate connected to an insulated or “floating” gate electrode, and an insulated-gate control voltage applied to the source, drain, or substrate in order to alter its threshold voltage or on/off state. These devices are often referred to as "double-gated" or "dual-gate MOSFETs" because of their gate/floating gate structure. The TK6A60W has a drain to source voltage (VDS) rating of 60V with a maximum drain current of 8.5A and is mainly used to power home appliances. It also has a maximum power dissipation rating of 633mW at a junction temperature of 25C.The S4VX, on the other hand, has a VDS rating of 100V with a maximum drain current of 4A and is mainly used for industrial applications. It has a maximum power dissipation rating of 350mW at a junction temperature of 125°C.These MOSFETs are referred to as "enhancement-mode" because they are designed to turn on when a voltage is applied to their gate terminal, increasing their current flow. When the gate voltage is removed, the MOSFET will turn off and the current will stop. The gate capacitance also plays a significant role in how quickly the MOSFET can switch between on/off states, as it must be charged or discharged in order to make the switch. MOSFETs are also known for their very high input impedances, meaning they can control large amounts of current with relatively low voltages. This makes them perfect for applications such as power control circuits, amplifiers, and logic circuits. The TK6A60W and S4VX are also well suited for use in switching applications, such as motor drives, HVAC systems, and motion control systems. In conclusion, the TK6A60W and S4VX are two types of MOSFETs that are suited for different applications depending on their particular voltage, current, and power ratings. They are both enhancement-mode MOSFETs, meaning that a voltage applied to their gate terminals will turn them on, and the gate capacitance plays a big role in their ability to switch quickly between on/off states. They also have very high input impedances, making them ideal for use in power control, amplifier, and logic circuits. Ultimately, these two transistors can be used in a wide range of applications, depending on their particular specs.The specific data is subject to PDF, and the above content is for reference
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