TK6A60W,S4VX Allicdata Electronics
Allicdata Part #:

TK6A60WS4VX-ND

Manufacturer Part#:

TK6A60W,S4VX

Price: $ 1.46
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N CH 600V 6.2A TO-220SIS
More Detail: N-Channel 600V 6.2A (Ta) 30W (Tc) Through Hole TO-...
DataSheet: TK6A60W,S4VX datasheetTK6A60W,S4VX Datasheet/PDF
Quantity: 1000
50 +: $ 1.31859
Stock 1000Can Ship Immediately
$ 1.46
Specifications
Vgs(th) (Max) @ Id: 3.7V @ 310µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220SIS
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
FET Feature: Super Junction
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 300V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Series: DTMOSIV
Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

TK6A60W,S4VX Application Field and Working Principle

The TK6A60W, S4VX are two types of enhancement-mode MOSFETs (metal-oxide-semiconductor field-effect transistors) that are mainly used in discrete power components. This type of transistor is specialized for high-speed switching because of their particular construction, which features a gate connected to an insulated or “floating” gate electrode, and an insulated-gate control voltage applied to the source, drain, or substrate in order to alter its threshold voltage or on/off state. These devices are often referred to as "double-gated" or "dual-gate MOSFETs" because of their gate/floating gate structure. The TK6A60W has a drain to source voltage (VDS) rating of 60V with a maximum drain current of 8.5A and is mainly used to power home appliances. It also has a maximum power dissipation rating of 633mW at a junction temperature of 25C.The S4VX, on the other hand, has a VDS rating of 100V with a maximum drain current of 4A and is mainly used for industrial applications. It has a maximum power dissipation rating of 350mW at a junction temperature of 125°C.These MOSFETs are referred to as "enhancement-mode" because they are designed to turn on when a voltage is applied to their gate terminal, increasing their current flow. When the gate voltage is removed, the MOSFET will turn off and the current will stop. The gate capacitance also plays a significant role in how quickly the MOSFET can switch between on/off states, as it must be charged or discharged in order to make the switch. MOSFETs are also known for their very high input impedances, meaning they can control large amounts of current with relatively low voltages. This makes them perfect for applications such as power control circuits, amplifiers, and logic circuits. The TK6A60W and S4VX are also well suited for use in switching applications, such as motor drives, HVAC systems, and motion control systems. In conclusion, the TK6A60W and S4VX are two types of MOSFETs that are suited for different applications depending on their particular voltage, current, and power ratings. They are both enhancement-mode MOSFETs, meaning that a voltage applied to their gate terminals will turn them on, and the gate capacitance plays a big role in their ability to switch quickly between on/off states. They also have very high input impedances, making them ideal for use in power control, amplifier, and logic circuits. Ultimately, these two transistors can be used in a wide range of applications, depending on their particular specs.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "TK6A" Included word is 9
Part Number Manufacturer Price Quantity Description
TK6A80E,S4X Toshiba Semi... 1.51 $ 30 MOSFET N-CH 800V TO220SIS...
TK6A65W,S5X Toshiba Semi... 1.39 $ 161 MOSFET N-CH 650V 5.8A TO-...
TK6A65D(STA4,Q,M) Toshiba Semi... 1.55 $ 2307 MOSFET N-CH 650V 5A TO-22...
TK6A60D(STA4,Q,M) Toshiba Semi... 1.32 $ 2252 MOSFET N-CH 600V 6A TO220...
TK6A45DA(STA4,Q,M) Toshiba Semi... 0.82 $ 1000 MOSFET N-CH 450V 5.5A TO-...
TK6A50D(STA4,Q,M) Toshiba Semi... 0.9 $ 1000 MOSFET N-CH 500V 6A TO-22...
TK6A55DA(STA4,Q,M) Toshiba Semi... 0.97 $ 1000 MOSFET N-CH 550V 5.5A TO-...
TK6A53D(STA4,Q,M) Toshiba Semi... 0.97 $ 1000 MOSFET N-CH 525V 6A TO-22...
TK6A60W,S4VX Toshiba Semi... 1.46 $ 1000 MOSFET N CH 600V 6.2A TO-...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics