TK72A08N1,S4X

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The TK72A08N1 is a single, insulated-gate field effect transistor (FET) that is designed to efficiently amplify signals and control higher power devices. The major application fields are motor control, amplifier design, rectifiers, amplifiers, transistor switches, and other switching circuits. This particular type of FET is commonly used in a wide range of applications such as radio and TV broadcast transmitters and receivers, inverter circuits, surge suppression equipment, ultra high frequency amplifiers, power supplies, and linear amplifiers, among others.

The TK72A08N1 is a gate-controlled, insulated-gate type FET. Insulated-gate field-effect transistors or FETs are able to operate reliably even in extreme temperature environments and in voltage-stressed applications. The device is static sensitive, meaning it does not need to be capacitively coupled to the signal source for bipolar current conduction. Instead, the field-effect transistor must be properly biased to prevent gates-source capacitively coupled noise and a large signal transition that may cause distortion in the signal. This FET is designed to have a low noise factor and operate efficiently in low power applications.

The working principle of the TK72A08N1 is based on a gate current bias structure. It operates by applying a gate current to the semiconductor channel and controlling the channel current. According to this principle, a voltage drop is induced in the drain current and the field-effect transistor’s current conduction capability is modulated. The gain of the device is proportional to the control voltage or current. Hence, a larger gate voltage will increase the performance of the device. On the other hand, a decrease in the control voltage or current will reduce the device’s performance.

The TK72A08N1 is designed to operate on 11.4 to 25 V with an on resistance of 10.5Ω and a maximum drain source voltage of 8 V. The device has a maximum drain current of 24 A and a maximum gate current of 250mA. The device also features an integrated voltage regulator which allows it to operate at higher voltages. Additionally, the FET is able to switch rapidly while maintaining low gate switching time and low electrical noise. The high speed switching time is possible because of the low resistance gate charge.

The TK72A08N1 is a gate-controlled insulated gate FET designed to operate efficiently in a variety of applications such as radio and TV broadcast transmitters, inverter circuits, ultra high frequency amplifiers, power supplies, and linear amplifiers. The use of a gate current bias structure enables the device to efficiently control larger power devices. Additionally, the device features an integrated voltage regulator and is able to switch rapidly while maintaining low gate switching time and low electrical noise. This makes the TK72A08N1 a great choice for motor control, amplifier design, rectifier, amplifier, transistor switch, and other switching circuits.

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