Allicdata Part #: | TK72A12N1S4X-ND |
Manufacturer Part#: |
TK72A12N1,S4X |
Price: | $ 2.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 120V 72A TO-220 |
More Detail: | N-Channel 120V 72A (Tc) 45W (Tc) Through Hole TO-2... |
DataSheet: | TK72A12N1,S4X Datasheet/PDF |
Quantity: | 116 |
1 +: | $ 2.18610 |
50 +: | $ 1.76060 |
100 +: | $ 1.58451 |
500 +: | $ 1.23238 |
1000 +: | $ 1.02111 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8100pF @ 60V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
Series: | U-MOSVIII-H |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 36A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 72A (Tc) |
Drain to Source Voltage (Vdss): | 120V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK72A12N1,S4X is an example of a single MOSFET transistor. MOSFET transistors are a type of field-effect transistor (FET) that act as electrically controlled switches for controlling electrical signals. The TK72A12N1,S4X is a typically constructed with a source, a drain, and a gate.The FET’s gate is insulated from the channel between the source and drain by a thin layer of silicon dioxide (SiO2), and is connected to the gate by a metal gate contact. The gate can be connected to the voltage source to control the flow of electrons through the channel. When the gate voltage is low, the FET acts as a resistor, limiting the flow of electrons in the channel. When the gate voltage is high, the FET turns on and electrons can flow easily between the source and the drain.The TK72A12N1,S4X is a p-channel MOSFET, which means the channel is formed by a positive dopant layer. This type of FET is typically used in applications that require high-speed switching, such as power converters and amplifier circuits. It is also known for its low on-resistance, low input capacitance, and wide temperature range. The TK72A12N1,S4X is often used to switch high-power devices. Its high voltage rating, low on-resistance, and wide temperature range allow it to be used in most high-power switching applications. The device’s source-drain breakdown voltage is rated to be 72V, and its on-resistance is as low as 0.85 ohms. The device is also rated to operate over a wide temperature range, from -40°C to 150°C. The TK72A12N1,S4X is also often used in amplifier circuits, as it has very low input capacitance and is highly resistant to electrical noise. It can be used in both single-ended and push-pull amplifier circuits. The device is usually connected between the output of the amplifier and ground, and the circuit is designed so that the voltage on the drain of the MOSFET is constant, allowing the transistor to turn on and off quickly and efficiently.In conclusion, the TK72A12N1,S4X is a single MOSFET transistor that can be used in high-power switching applications and amplifier circuits. It is rated to operate over a wide temperature range and has a low on-resistance and low input capacitance. This makes it suitable for many applications where high-speed, low-noise switching is required.
The specific data is subject to PDF, and the above content is for reference
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