TK72E08N1,S1X Allicdata Electronics
Allicdata Part #:

TK72E08N1S1X-ND

Manufacturer Part#:

TK72E08N1,S1X

Price: $ 1.92
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N CH 80V 72A TO-220
More Detail: N-Channel 80V 72A (Ta) 192W (Tc) Through Hole TO-2...
DataSheet: TK72E08N1,S1X datasheetTK72E08N1,S1X Datasheet/PDF
Quantity: 79
1 +: $ 1.73880
50 +: $ 1.40175
100 +: $ 1.26157
500 +: $ 0.98121
1000 +: $ 0.81300
Stock 79Can Ship Immediately
$ 1.92
Specifications
Series: U-MOSVIII-H
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 72A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 36A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 40V
FET Feature: --
Power Dissipation (Max): 192W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
Description

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The TK72E08N1,S1X is a type of transistor, more specifically a Field Effect Transistor (FET) and more specifically a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with a single gate. It is a transistor that utilizes an electric field in order to control current flow by using a voltage. It is a very important component in today\'s electronic circuits and can be found in numerous different applications.

The TK72E08N1,S1X is a MOSFET type transistor that is rated for high speed and low power dissipation. The voltage requirements for the TK72E08N1,S1X are low, and it has low gate capacitance. These features make it suitable for use in high speed devices such as switched-mode power supplies and circuit boards that are sensitive to high voltage levels.

The TK72E08N1,S1X has two main working principles that make it a great choice for many different applications. The first working principle is the drain-source voltage breakdown. The drain-source voltage is the voltage that is applied to the drain terminal of the transistor, and it determines how much current can be drawn from the source terminal to the drain terminal. When this voltage exceeds a certain level, the current draw is reduced and the transistor is able to control the current in that application.

The second working principle of the TK72E08N1,S1X is the voltage drive. This means that the voltage between the gate and the source is used to determine the current flow between the source and the drain. When the voltage is too low, the transistor does not let enough current pass through, and when the voltage is too high, the transistor is turned off and no current passes through. This feature makes it suitable for situations where precise control of current is required.

In terms of application fields, the TK72E08N1,S1X is often used in communications devices such as radios, cellular phones and satellite television receivers. It is also used in audio amplifiers and in power supplies. Additionally, it can be found in industrial and consumer consumer electronics, and it is used to regulate current in circuits that are sensitive to voltages and currents.

The TK72E08N1,S1X is a great choice for many kinds of electronics applications, due to its low power dissipation, low gate capacitance and low breakdown voltage. It is able to provide precise control over current and voltage, making it a great choice for many different applications. In conclusion, the TK72E08N1,S1X is a great MOSFET choice for many different electronic applications.

The specific data is subject to PDF, and the above content is for reference

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