Allicdata Part #: | TK72E12N1S1X-ND |
Manufacturer Part#: |
TK72E12N1,S1X |
Price: | $ 1.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N CH 120V 72A TO-220 |
More Detail: | N-Channel 120V 72A (Ta) 255W (Tc) Through Hole TO-... |
DataSheet: | TK72E12N1,S1X Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.34757 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 255W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8100pF @ 60V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
Series: | U-MOSVIII-H |
Rds On (Max) @ Id, Vgs: | 4.4 mOhm @ 36A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 72A (Ta) |
Drain to Source Voltage (Vdss): | 120V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK72E12N1, S1X transistor is a single polarity field-effect transistor (FET) designed as a high current switch. It is used in applications that require an electrically controlled switch to provide a connection between two points without varying the voltage or current. It is typically used in switch mode power regulators, audio amplifiers, high speed switching circuits and other electronic devices.
The transistor is composed of two elements: the source and the drain. The source is responsible for providing the input signal that is used to switch the transistor on and off, while the drain is responsible for controlling the output current flow. The source and drain each have their own voltage, and the voltage difference between them determines the amount of current that can flow through the transistor. A greater voltage difference between the source and drain will increase the amount of current that can flow through the transistor.
A controlling or “gate” voltage is also applied to the transistor. This voltage is applied across the drain and source. The amount of current flowing through the transistor is controlled by the voltage applied to the gate, with larger voltages providing greater amounts of current flow through the transistor. When the gate voltage reaches a certain threshold, the transistor will turn “on”, allowing current to flow, and when the gate voltage drops below a certain threshold, the transistor will turn “off” and no current will flow.
The TK72E12N1, S1X is most often used in switch mode power supply and switching applications. It can be used to provide an on/off control for a circuit, such as a power regulator, or it can be used to switch audio signals. It is also used in applications in which high power switches are required, such as motor control and lighting control.
The TK72E12N1, S1X is a high current switch with a low input gate capacitance, making it suitable for high frequency switching applications. The low on-resistance of the transistor results in low power loss, making it an efficient switch. The high switching current makes the transistor suitable for use in a variety of applications.
In summary, the TK72E12N1, S1X is a single polarity field-effect transistor (FET) designed as a high current switch. It is used in switch mode power supply and switching applications, audio amplifiers, high speed switching circuits, motor control and lighting control, and other applications that require an electrically controlled switch. The transistor is composed of two elements: the source and the drain. A controlling or “gate” voltage is applied to the transistor, and the source and drain each have their own voltage. The voltage difference between them determines the amount of current that can flow through the transistor, while the gate voltage controls the amount of current that can flow. The TK72E12N1, S1X transistor has a low input gate capacitance and its low on-resistance provides low power loss, making it an efficient switch.
The specific data is subject to PDF, and the above content is for reference
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