TN2106K1-G Discrete Semiconductor Products

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TN2106K1-G is a small signal surface mount N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). This type of transistor is an active switching device that can be used to amplify the current made available by the source, or to switch low-voltage signals. The TN2106K1-G is a high-performance small-signal MOSFET specifically designed for off-the-board applications. It is intended to be used as a low-power switch or low-power amplifier.

The TN2106K1-G is a high-speed MOSFET, capable of switching signals at up to -20V and 6A. It has a high input impedance, ensuring low total power consumption, and is capable of supporting both AC and DC applications. The device also has an on-resistance of 6 ohms and a thermal resistance of 2.1 degrees Celsius per watt.

The TN2106K1-G is used in a variety of applications. It has been successfully used in motor controls, automotive electronic systems, analogue and digital circuits, and low-power switching circuitry. The TN2106K1-G is built with a special low-capacitance die, making it ideal for use in high frequency systems. The MOSFET is also easy to configure for use in a variety of gate drive strategies.

The TN2106K1-G device features a proprietary guard ring structure, which allows for increased breakdown voltage and higher reliability. This feature makes the device suitable for use in applications with harsh environments. It is also designed with an integrated thermal shut-down feature, providing built-in protection for the device from over heating.

The working principle of the TN2106K1-G is based on a capacitive coupling between the gate and the source. The capacitance between the two terminals is set at a value that allows the gate to change the potential of the source. This change of potential causes the current through the MOSFET to be altered, allowing the device to act as either a switch or amplifier. The gate of the MOSFET can be altered through the application of either a positive or negative voltage, allowing the device to either switch on or off, depending on what is required.

The TN2106K1-G offers excellent speed, performance and reliability. It can be used to power low-power signals as well as handle high-power applications. The device is also easy to configure and is suitable for use in different gate drive strategies. This makes the TN2106K1-G an ideal choice for a wide variety of applications.

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