Allicdata Part #: | TN2106N3-G-ND |
Manufacturer Part#: |
TN2106N3-G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET N-CH 60V 300MA TO92-3 |
More Detail: | N-Channel 60V 300mA (Tj) 740mW (Tc) Through Hole T... |
DataSheet: | TN2106N3-G Datasheet/PDF |
Quantity: | 1757 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 740mW (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.5 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 300mA (Tj) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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TN2106N3-G is a type of transistor that belongs to the family of FETs (Field-effect transistors) and more specifically to MOSFETs (Metal-oxide semiconductor field-effect transistors). It is of a single type, meaning it has a single transistor die inside, or monolithic die.
FETs are unipolar transistors and unlike the bi-polar transistors, don’t need any current to control the states of its output. They instead rely on an electric field to control its current flow rate, hence why they are called field-effect transistors.
TN2106N3-G is a general purpose, high-voltage, low-current MOSFET transistor, which can handle up to 60 volts of DC current and 1 ampere of DC linear current. This feature makes it ideal for use in many electrical applications, the most common being small motor control, audio and automotive applications, light duty switching applications, etc.
The TN2106N3-G also has a very low on-state resistance (RDS(ON)) of about 0.4 ohm which means that it can switch on and off very quickly and still maintain low power loss. This is one of the features of a MOSFET, that gives it an edge over other types of transistors, and is one of the reasons why it is used in so many applications.
The most important aspect of a TN2106N3-G is its working principle. The transistor works on the principle of a voltage-controlled current source. In this arrangement, the current flows from the drain to the source and is controlled by the voltage applied to the gate. In a transistor such as the TN2106N3-G, the voltage on the gate will be the same as the voltage on the source since there is a back gate. Depending on the application, the gate voltage can be applied either directly or indirectly.
The current which emerges from the parallel structure of the TN2106N3-G is proportional to the voltage applied to the gate. This makes it an ideal choice for applications that require variable current adjustment. One of the key features of this transistor is its ability to operate at temperatures ranging from -40°C to 125°C.
In conclusion, the TN2106N3-G is a single type, general purpose, high-voltage and low-current, MOSFET transistor with a wide range of applications. It has a low on-state resistance, good temperature performance and is easy to use in any application due to its voltage-controlled current source characteristics.
The specific data is subject to PDF, and the above content is for reference
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