TN2124K1-G Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TN2124K1-G is a medium power MOSFET transistor which is normally utilized in discrete semiconductor applications for the purpose of powering switching in circuits and amplifying the signals which drive the circuit. The TN2124K1-G transistor has an operating temperature range of -65 to +175°C and a breakdown voltage of 30 volts.

Application Field

The TN2124K1-G transistor is typically used in high power and medium power switching applications. The device has a wide range of potential uses, with the most common being in power supplies, motor control, and audio applications. The device can be used in low-on-resistance circuits as well as for capacitive boost applications and as an amplifier.

The device is also used in automotive electrical systems, for battery applications, for feedback in memory circuits, and for switching in high current applications. Additionally, the TN2124K1-G transistor can be used in cellular base station applications, communication equipment, and electronic switch modules.

Working Principle

The TN2124K1-G transistor is a MOSFET device which uses P-channel, N-channel, and Enhancement-Mode voltage-variable MOSFETs. In order to understand the working principle of the TN2124K1-G transistor, it is first necessary to understand the basics of MOSFET technology. The P-channel MOSFETs within the device are designed to be used as the source and drain, while the N-channel MOSFETs act as a gate. The P-channel MOSFETs are used to handle the larger current flow, while the N-channel MOSFETs are used to control the flow of the current. The P-channel MOSFETs have a lower threshold voltage than the N-channel MOSFETs and therefore are better suited to handle larger current flows.

The TN2124K1-G is also designed to provide an enhancement-mode voltage-variable MOSFET. This MOSFET is designed to operate in such a way that the voltage applied to the gate of the transistor will determine the amount of current that will be allowed through the device. The higher the voltage applied to the gate, the more current will be allowed to flow through the device.

The TN2124K1-G transistor is designed to be used as a power MOSFET in high power and medium power switching applications. The device is designed to be both reliable and efficient, with the ability to handle up to 30 volts of breakdown voltage. Additionally, the device is designed to be able to withstand high temperatures, making it the ideal choice for many different applications.

In summary, the TN2124K1-G transistor is an ideal choice for many different applications due to its high power and medium power switching capacity, wide range of potential uses, and its low on-resistance capabilities. Additionally, the device is designed to be able to handle high temperatures and breakdown voltage, making it the perfect switch for many different applications. The TN2124K1-G is a versatile and reliable transistor which is perfect for applications requiring power MOSFETs.

The specific data is subject to PDF, and the above content is for reference