TN2130K1-G Discrete Semiconductor Products

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The TN2130K1-G is one type of single MOSFET transistor. It is designed for applications such as switching and linear power amplification. It is a small-signal enhancement-mode transistor with low on-resistance, which makes it suitable for high-speed switching circuits.

The TN2130K1-G has a drain-source on-resistance of 2.1Ω, and it operates with a drain-source voltage of 40V. The maximum power dissipation is 0.9W, and the maximum drain current is 1.6A. It can operate in temperatures as low as -55°C and as high as 150°C.

Working Principle

MOSFET transistors operate on the principle of metal-oxide-semiconductor formation. In the case of the TN2130K1-G, an oxide-semiconductor layer is formed between the metal gate and the semiconductor substrate. This layer acts as an insulating barrier that prevents the flow of current between the two components. Therefore, when a voltage is applied to the gate, it creates an electric field that breaks down the insulating barrier, allowing current to flow from the drain to the source.

The TN2130K1-G is designed with an enhancement-mode operation, which means that it requires a positive gate-source voltage in order to turn on. This type of operation makes it suitable for high-speed switching applications, as well as for linear power amplifying. It can also be used in applications such as refrigeration, air conditioning, motors, and LED control.

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