US5U1TR Allicdata Electronics
Allicdata Part #:

US5U1TR-ND

Manufacturer Part#:

US5U1TR

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 30V 1.5A TUMT5
More Detail: N-Channel 30V 1.5A (Ta) 1W (Ta) Surface Mount TUMT...
DataSheet: US5U1TR datasheetUS5U1TR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.16059
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Package / Case: 6-SMD (5 Leads), Flat Lead
Supplier Device Package: TUMT5
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The US5U1TR is a single field-effect transistor (FET) that is highly versatile and provides many practical applications. It is mainly used in the switching and amplifier circuits of semiconductor devices, but can also be used in other applications such as digital logic devices and analog signal control circuits.

The US5U1TR is a Junction Field-Effect Transistor (JFET), and is typically used to control the flow of current between two terminals with a gate voltage. It consists of a semiconductor material with two regions being highly doped with holes or electrons – the sources and the drains – and a gate region sandwiched between the sources and drains.

The gate region of the US5U1TR is highly-insulated from the rest of the device by a thin oxide layer, allowing it to control the current flow through the device by applying a small voltage, or gate potential, to the gate terminal. When a negative potential is applied to the gate, it increases the barrier between the sources and drains, reducing the current flowing in the device. If a positive bias is applied to the gate, it reduces the barrier, resulting in increased current.

The US5U1TR can be used in many types of circuits, such as switching and amplifying circuitry. It is commonly used in digital logic circuits, where it serves as a switch, controlling the current to individual components, and can also be used as an industrial amplifier. In amplifier circuits, the US5U1TR increases the gain of a signal to produce a desired voltage, current, or power value.

The US5U1TR is also commonly used in analog signal control circuits, such as audio amplifiers and radio frequency (RF) amplifiers. In these types of circuits, it will act as a voltage amplifier, amplifying the incoming signal and providing a higher gain than the input. The US5U1TR can be used in conjunction with other components, such as resistors, transistors and capacitors to create a more complex circuit.

The US5U1TR is also used in high frequency applications, such as radio frequency amplifiers, because of its relatively low input and output capacitance. The US5U1TR is also popular in audio applications, as it can reproduce clear sound without introducing distortion. Furthermore, it can also be used as a power control device, as it can be used to switch on and off large amounts of current.

In short, the US5U1TR is a single FET that can be used for both digital and analog applications, and is highly versatile due to its low input and output capacitance. Its wide range of applications and practical uses make it a popular choice for many electronic devices.

The specific data is subject to PDF, and the above content is for reference

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