Allicdata Part #: | US5U30TR-ND |
Manufacturer Part#: |
US5U30TR |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 20V 1A TUMT5 |
More Detail: | P-Channel 20V 1A (Ta) 1W (Ta) Surface Mount TUMT5 |
DataSheet: | US5U30TR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.16620 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 390 mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 2.1nC @ 4.5V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 10V |
FET Feature: | Schottky Diode (Isolated) |
Power Dissipation (Max): | 1W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TUMT5 |
Package / Case: | 6-SMD (5 Leads), Flat Lead |
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The US5U30TR is a insulated-gate bipolar transistor (IGBT) module used to control the flow of electric current. It is used in a wide range of applications and functions as a power switch. An IGBT bridge is an electronic circuit that contains one or more IGBTs and couples the power source to its load. The US5U30TR is commonly used in this type of bridge in order to provide a reliable and efficient switch to regulate the current.
The US5U30TR is a single-transistor module. It has a single insulated-gate bipolar transistor (IGBT) with a control element based on a thin-film insulated gate field-effect transistor (MOSFET). The control element works by using an electric field to control the conductivity of the IGBT. The control element provides the switching and control actions of the US5U30TR.
The US5U30TR provides an efficient way to control and switch electrical current. This type of transistor module is often used in systems such as power supplies, motor control, and lighting control. It is also used in high-current applications such as electric vehicles and solar power systems.
The working principle of the US5U30TR is based on the properties of the control element. The IGBT\'s control element are based on MOSFETs, which are used to control the conductivity of the IGBT. When the gate voltage of the MOSFET is high, current flows through the IGBT, allowing it to switch on. When the gate voltage is low, the IGBT is switched off.
The US5U30TR can be used in a variety of applications and systems. It can be used in motor control systems, power supplies and lighting controls. It is also ideal for use in high-current applications where reliability, efficiency and switching speed are important. It is also used in automotive and renewable energy systems, allowing for efficient and reliable operation.
In conclusion, the US5U30TR is a single-transistor insulated-gate bipolar transistor (IGBT) module. It is commonly used in IGBT bridges to control and switch electrical current. The control element is based on a thin-film insulated gate field-effect transistor (MOSFET) and works by using an electric field to control the conductivity of the IGBT. The US5U30TR is ideal for applications requiring fast switching and reliable operation. It is used in a variety of applications and systems such as motor control, power supplies and lighting control, as well as high-current applications such as electric vehicles and solar power systems.
The specific data is subject to PDF, and the above content is for reference
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