US5U3TR Discrete Semiconductor Products |
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Allicdata Part #: | US5U3TR-ND |
Manufacturer Part#: |
US5U3TR |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 1.5A TUMT5 |
More Detail: | N-Channel 30V 1.5A (Ta) 1W (Ta) Surface Mount TUMT... |
DataSheet: | US5U3TR Datasheet/PDF |
Quantity: | 6000 |
3000 +: | $ 0.16059 |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
Package / Case: | 6-SMD (5 Leads), Flat Lead |
Supplier Device Package: | TUMT5 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 80pF @ 10V |
Vgs (Max): | 12V |
Gate Charge (Qg) (Max) @ Vgs: | 2.2nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 240 mOhm @ 1.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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Field-Effect Transistors (FETs) are devices that use an electric field to control their conductivity. The MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a subset of FETs and is the most widely used semiconductor device. The MOSFET is a type of field-effect transistor (FET) that uses a gate electrode to control the flow of electrons between source and drain terminals. MOSFETs can be single or dual types. A Single MOSFET (or US5U3TR) is a type of MOSFET that has only one gate electrode. It is capable of providing high speed switching of analog and digital signals, as well as low power dissipation in both switching and linear operation.
The US5U3TR is a single MOSFET that features an advanced small-signal model for high-frequency applications. It is designed for high-speed switch mode power supplies, digital signal processing, computing, communications, and automotive applications. The US5U3TR is extremely versatile and is well-suited for both digital and analog applications.
The working principle of the US5U3TR is fairly simple and is based on the principles of field-effect transistors. The device is comprised of four terminals: source, drain, gate and body. The source and drain terminals allow the flow of electrons in and out of the device, while the gate terminal is used to control the flow of electrons. The body terminal, also known as the bulk terminal, is used to connect the gate to the source and drain to ground. The gate terminal is also used to modulate and control the voltage between the source and drain terminals.
The working principle of the US5U3TR is based on the “Field Effect” of the gate. When a voltage is applied to the gate terminal, a voltage potential is created between the source and drain terminals. This creates an electric field that modulates the current flow between the source and drain electrodes. By controlling the voltage applied to the gate terminal, the US5U3TR can be used to control the flow of electrons through it. It can also be used to amplify signals and is commonly used in the design of high-speed and low-power digital circuits.
The US5U3TR is a small and highly efficient device that can be used in a wide variety of applications ranging from high-speed switch mode power supplies to wireless communications. It is also used in the design of audio amplifiers and other consumer electronics. Thanks to its low gate capacitance, the US5U3TR is perfect for high-frequency applications such as radio transmitters and receivers.
The US5U3TR is a versatile, reliable and economical device that can be used in the design of many consumer electronics and other electronic circuits. It is easy to use, highly efficient and reliable, making it an ideal choice for both professionals and hobbyists alike.
The specific data is subject to PDF, and the above content is for reference
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