US5U38TR Allicdata Electronics
Allicdata Part #:

US5U38TR-ND

Manufacturer Part#:

US5U38TR

Price: $ 0.12
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET P-CH 20V 1A TUMT5
More Detail: P-Channel 20V 1A (Ta) 1W (Ta) Surface Mount TUMT5
DataSheet: US5U38TR datasheetUS5U38TR Datasheet/PDF
Quantity: 6000
3000 +: $ 0.10400
Stock 6000Can Ship Immediately
$ 0.12
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TUMT5
Package / Case: 6-SMD (5 Leads), Flat Lead
Description

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The US5U38TR is a device type within the group of Field Effect Transistors (FETs) known as a Single Metal–Oxide–Semiconductor FET (MOSFET). This type of transistor is ideal for use in applications that require an unamplified signal such as a switching application or an analog signal source. MOSFETs are preferred over other FETs because of their very low input capacitance, stability, and low noise characteristics.

MOSFETs work by changing the application of a voltage or current to a semiconductor material. This change in voltage or current, which is referred to as a gate current, results in a field effect in the form of negative resistance. This negative resistance decreases the amount of current that can flow through a device and eventually, the amount of voltage available to drive the positive side of the circuit. The MOSFET uses the gate current to control the output current and ultimately, the output voltage and power available.

The US5U38TR specifically is a planar, monolithic lateral MOSFET with 4 leads in a single flat-pack package. It utilizes a vertical channel N-channel structure to provide excellent thermal stability and low noise performance. The device also has a low input capacitance which reduces the EMI and switching noise. The power dissipation of the device is up to 5W, which makes it suitable for many applications. The US5U38TR is also suitable for use in high speed logic as well as audio and video controlled circuits.

The US5U38TR is typically used in switching applications such as computers and peripheral devices, power supplies, modulated signaling, audio and video program switching, and high speed and low speed logic. As an analog signal source, the device can be used for linear circuit applications, general analog signal control, and device parameter control.

In conclusion, the US5U38TR is a type of single MOSFET that is ideal for use in applications that require an unamplified signal. It utilizes a vertical channel N-channel structure to provide excellent thermal stability and low noise performance. It has a low input capacitance which reduces the EMI and switching noise and is suitable for switching applications such as computers and peripheral devices, power supplies, modulated signaling, audio and video program switching, and high speed and low speed logic. It can also be used for linear circuit applications, general analog signal control, and device parameter control.

The specific data is subject to PDF, and the above content is for reference

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