VN10KN3-G-P002 Allicdata Electronics

VN10KN3-G-P002 Discrete Semiconductor Products

Allicdata Part #:

VN10KN3-G-P002TR-ND

Manufacturer Part#:

VN10KN3-G-P002

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Microchip Technology
Short Description: MOSFET N-CH 60V 310MA TO92-3
More Detail: N-Channel 60V 310mA (Tj) 1W (Tc) Through Hole TO-9...
DataSheet: VN10KN3-G-P002 datasheetVN10KN3-G-P002 Datasheet/PDF
Quantity: 1000
2000 +: $ 0.25956
Stock 1000Can Ship Immediately
$ 0.29
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
FET Feature: --
Power Dissipation (Max): 1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Description

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The VN10KN3-G-P002 is a modern field-effect transistor (FET) with a metal-oxide-semiconductor (MOS) structure. It is a single gate field-effect voltage controlled current source in which the gate voltage controls the drain-source current.

This type of transistor is well suited to several applications, including audio amplifiers, general purpose amplifiers, instrumentation, and voltage regulator circuits. It is also used in a wide variety of digital logic and switching circuits. The VN10KN3-G-P002 is particularly suitable for low-noise, high-gain applications.

In a typical application, the source is connected to the positive supply rail and the gate is connected to a biasing voltage divider. The gate voltage thus creates a channel of electrons between the source and the drain, allowing the current to flow from the source to the drain. The drain-source current is then controlled by the gate voltage, with higher gate voltages leading to higher drain-source currents.

The VN10KN3-G-P002 can also function as a variable-gain amplifier, with the drain-source current providing the gain control. For this application, the gate voltage is fixed and the drain-source current is adjusted to produce the desired gain. In this way, the gain can be easily adjusted without the need for external components or circuits.

The VN10KN3-G-P002 is a power field-effect transistor and is capable of handling large drain currents. It is also capable of operating at high supply voltages, up to 50V. This makes it ideal for high-power applications, such as motor control, power converters, and industrial control systems.

The VN10KN3-G-P002 is a robust and reliable device, designed for use in harsh industrial environments. It is available in a range of packages and is lead-free, RoHS compliant, and ESD protected for a wide range of applications.

In summary, the VN10KN3-G-P002 is a modern FET with a MOS structure and single gate design. It is well suited to audio amplifiers, variable-gain amplifiers, and power applications, and is suitable for use in rugged and harsh industrial environments.

The specific data is subject to PDF, and the above content is for reference

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