VN10KN3-G-P002 Discrete Semiconductor Products |
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Allicdata Part #: | VN10KN3-G-P002TR-ND |
Manufacturer Part#: |
VN10KN3-G-P002 |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET N-CH 60V 310MA TO92-3 |
More Detail: | N-Channel 60V 310mA (Tj) 1W (Tc) Through Hole TO-9... |
DataSheet: | VN10KN3-G-P002 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.25956 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 310mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92-3 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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The VN10KN3-G-P002 is a modern field-effect transistor (FET) with a metal-oxide-semiconductor (MOS) structure. It is a single gate field-effect voltage controlled current source in which the gate voltage controls the drain-source current.
This type of transistor is well suited to several applications, including audio amplifiers, general purpose amplifiers, instrumentation, and voltage regulator circuits. It is also used in a wide variety of digital logic and switching circuits. The VN10KN3-G-P002 is particularly suitable for low-noise, high-gain applications.
In a typical application, the source is connected to the positive supply rail and the gate is connected to a biasing voltage divider. The gate voltage thus creates a channel of electrons between the source and the drain, allowing the current to flow from the source to the drain. The drain-source current is then controlled by the gate voltage, with higher gate voltages leading to higher drain-source currents.
The VN10KN3-G-P002 can also function as a variable-gain amplifier, with the drain-source current providing the gain control. For this application, the gate voltage is fixed and the drain-source current is adjusted to produce the desired gain. In this way, the gain can be easily adjusted without the need for external components or circuits.
The VN10KN3-G-P002 is a power field-effect transistor and is capable of handling large drain currents. It is also capable of operating at high supply voltages, up to 50V. This makes it ideal for high-power applications, such as motor control, power converters, and industrial control systems.
The VN10KN3-G-P002 is a robust and reliable device, designed for use in harsh industrial environments. It is available in a range of packages and is lead-free, RoHS compliant, and ESD protected for a wide range of applications.
In summary, the VN10KN3-G-P002 is a modern FET with a MOS structure and single gate design. It is well suited to audio amplifiers, variable-gain amplifiers, and power applications, and is suitable for use in rugged and harsh industrial environments.
The specific data is subject to PDF, and the above content is for reference
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