VN10KN3-G-P014

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The VN10KN3-G-P014 is a surface-mount, single field effect transistor (FET) designed for use in applications requiring an on-state current rating of 10 Amps. This device is designed to offer low RDS(on) and a high operating temperature range.

This N-Channel MOSFET device features a breakdown voltage of VGS(R) = 1.8 V and a drain-source capacitance of CDSS = 0.15 pF. It is a surface-mount device with a total gate charge (QG) of 10 nC and a maximum drain-source on-state resistance (RDS(on)) of 0.028 Ohm.The VN10KN3-G-P014 is a transistor that has been specifically designed for use in switching applications. It is optimized for both high-speed and low-noise operation and is well-suited for circuit applications such as power switching, driver circuits, and voltage regulator circuits.

This device operates on the principles of a field effect transistor (FET). FETs are an electronic switch that are operated using an electric charge on a metal gate. When a voltage is applied to the gate, the FET will turn on. The drain current ( ID ) is then proportional to the voltage applied to the gate. The voltage at which the FET turns on is referred to as the the “threshold voltage”.

The VN10KN3-G-P014 is designed to operate in a “single-gate” configuration. In this configuration, the gate terminal is directly connected to the drain terminal. This results in a low on-state resistance, because the gate is driven directly by the drain current. Additionally, the single-gate configuration reduces the gate capacitance, enabling high-speed operation.

The VN10KN3-G-P014 is designed to operate in applications requiring an on-state current rating of 10 Amps. With its low on-state resistance and high operating temperature range, it is optimized for high-speed and low-noise operation. Furthermore, its single-gate configuration ensures a low gate capacitance, helping to enable high-speed operation.

The VN10KN3-G-P014 is an ideal choice for applications such as power switching, driver circuits, and voltage regulator circuits. This FET offers high performance and reliability, making it the perfect choice for a variety of applications.

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