Allicdata Part #: | VN10LP-ND |
Manufacturer Part#: |
VN10LP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 270MA TO92-3 |
More Detail: | N-Channel 60V 270mA (Ta) 625mW (Ta) Through Hole T... |
DataSheet: | VN10LP Datasheet/PDF |
Quantity: | 8102 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 270mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 625mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92-3 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
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The VN10LP is one of the most advanced and widely used single MOSFETS (metal-oxide-semiconductor field-effect transistors) available. A MOSFET is a type of transistor which uses a gate to control the electrical current flow between the source and the drain. The VN10LP is designed to operate as either a N-channel or P-channel device, depending on its application.
The VN10LP offers some of the latest advancements in MOSFET technology. These include improved power efficiency, low voltage operation, and improved robustness for demanding applications. This makes it an ideal choice for a wide range of electronic devices, from consumer electronic products to high-performance industrial systems.
The working principle of the VN10LP is based on two essential components: the substrate and the gate oxide. The substrate is the semiconductor material onto which other elements such as transistors and contacts are deposited. The gate oxide is a thin layer of oxide that is used to control the flow of electrons between the source and the drain. The gate oxide acts as a gate, allowing the electrons to flow between the source and the drain when certain conditions are met.
The VN10LP has a maximum drain-source voltage (VDS) of 50 volts and a maximum gate-source voltage (VGS) of 30 volts. It has a threshold voltage of 0.8 volts, which means it can start conducting as soon as a small voltage is applied to the gate. The device also has a very low “on” resistance, which means it can handle a large amount of current. This makes it an ideal choice for applications where a large amount of power needs to be switched quickly.
Several features help make the VN10LP an ideal choice for various applications. It has a simple electrical design, which makes it easy to integrate into a circuit. It also has a low thermal resistance, which helps ensure that the device operates correctly and efficiently even in demanding environments. For example, it can be used in harsh industrial settings without the risk of overheating.
The VN10LP is also highly reliable and capable of withstanding a wide range of temperatures. It has an operating temperature range of -55 to +175 degrees Celsius, which means it can be used in virtually any operating environment. Finally, it is also very cost effective, making it a popular choice for a wide range of applications.
The VN10LP is a versatile and reliable device that is capable of meeting the demands of many modern applications. Its advanced features make it an ideal choice for applications that require high levels of performance and reliability. From consumer electronics to high-performance industrial applications, the VN10LP is the perfect choice for a wide range of applications requiring MOSFET technology.
The specific data is subject to PDF, and the above content is for reference
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