VN10LPSTOA Discrete Semiconductor Products |
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Allicdata Part #: | VN10LPSTOATR-ND |
Manufacturer Part#: |
VN10LPSTOA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 0.27A TO92-3 |
More Detail: | N-Channel 60V 270mA (Ta) 625mW (Ta) Through Hole E... |
DataSheet: | VN10LPSTOA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 270mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 625mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | E-Line (TO-92 compatible) |
Package / Case: | E-Line-3, Formed Leads |
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VN10LPSTOA is a high voltage vertical power MOSFET. This type of MOSFET can be used in various applications. It is used in buck converters, flyback converters, and DC/DC converters among other things. This type of MOSFET is constructed using planar construction and utilizes high voltage technology, which allows it to handle up to 600V in certain conditions. The VN10LPSTOA is a single N-channel MOSFET, which is capable of operating with a drain-source voltage of 600V, drain current of 30A, and power dissipation of up to 9.5mW.
The basic working principle behind the VN10LPSTOA is simple. To understand it, we need to understand the working of a MOSFET in general. A MOSFET is a field-effect transistor that works on a principle of current flow. It consists of three terminals, namely the source, gate, and drain. A MOSFET operates by drawing a current from the drain to the source. The current flow is controlled by the voltage applied to the gate terminal. If a negative voltage is supplied to the gate, the transistor will not conduct current between the source and drain. If a positive voltage is applied to the gate, the transistor will conduct current.
In the case of the VN10LPSTOA, the current flowing between the source and drain is controlled by the voltage applied to the gate terminal. When a high voltage is applied to the gate terminal, the transistor acts as a switch, allowing current to flow between the source and drain. When a low voltage is applied to the gate terminal, the transistor acts as an open switch, and no current flows between the source and drain. In this way, the transistor acts as a switch, controlling the current flow between the source and drain.
The VN10LPSTOA is widely used in applications that require high voltage and high power. These applications include switching power supplies, high voltage switching, inverters, and DC-DC converters. The VN10LPSTOA is also used in RF applications such as RF amplifier circuits and RF switching circuits. The MOSFET is also used in automotive applications such as engine control and HVAC controls. The MOSFET is also used in commercial applications such as solar power systems and UPS systems.
In summary, the VN10LPSTOA is a single-n MOSFET that is capable of handling up to 600V and dissipating up to 9.5mW. It is widely used in high voltage and high power applications, such as switching power supplies, inverters, and DC-DC converters. The working principle behind the VN10LPSTOA is simple; it works on a principle of current flow, where the current flow between the source and drain is controlled by the voltage applied to the gate terminal.
The specific data is subject to PDF, and the above content is for reference
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