XP0111000L Allicdata Electronics

XP0111000L Discrete Semiconductor Products

Allicdata Part #:

XP0111000LTR-ND

Manufacturer Part#:

XP0111000L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS DUAL PNP SMINI5
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: XP0111000L datasheetXP0111000L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SMini5-G1
Description

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The XP0111000L is an integrated voltage pre-biased array from NXP Semiconductors. This device is a general-purpose low-voltage pre-biased array for a variety of applications such as telecommunications, medical, industrial, and automotive.

The XP0111000L is a low-power, monolithic integrated circuit which provides a high level of integration for applications requiring high speed and low power consumption. This device combines a cascoded transistor array and an output stage with a minimum of components. The integrated voltage pre-biased array provides fast switching speed, high drive capability, and low-voltage operation.

The XP0111000L device is specially designed to operate at very low voltage and low power while providing a very high switching speed. A wide voltage range of 1.2V to 6V allows the device to operate in a variety of conditions. This device has integrated on-chip temperature compensation, allowing it to operate at temperatures as low as -55°C. The XP0111000L is also designed to be compatible with both CMOS and TTL logic.

The XP0111000L array consists of a cascoded transistor array including four npn transistors in a ‘Darlington’ configuration. The integrated voltage pre-biased array has a low input bias current and a low output impedance, enabling the device to drive high capacitances. The output of the array is provided by a built-in operational amplifier, which provides improved linearity and increased accuracy.

The XP0111000L integrated voltage pre-biased array is a versatile solution for applications requiring low switching times, low power consumption, and high drive capability. The device can be used for signal conditioning applications, or for amplifier designs. In addition, the cascoded transistor array of the device provides simple and efficient current-sourcing/current-sinking capability, resulting in superior power efficiency and low power dissipation.

The XP0111000L is a versatile integrated voltage pre-biased array which provides low switch times, low power consumption, and high drive capability. The low input bias current and low output impedance of the device enable it to be used in a variety of applications. The integrated operational amplifier provides improved linearity and accuracy. With its wide operating temperature range and CMOS/TTL compatibility, the XP0111000L is the ideal solution for many signal conditioning and amplifier design applications.

The specific data is subject to PDF, and the above content is for reference

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