XP0111M00L Discrete Semiconductor Products |
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Allicdata Part #: | XP0111M00LTR-ND |
Manufacturer Part#: |
XP0111M00L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS DUAL PNP SMINI5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | XP0111M00L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | 5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package: | SMini5-G1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The XP0111M00L application field and working principle can be divided into the categories of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. It is a type of NPN multiple emitter transistor array package, designed for use in pre-biased applications. The transistor can be used in a variety of electronic circuits, such as in high-speed power switches, diode rectifier circuits, low-side switch configurations, and other applications where a stable voltage source is required.
At the heart of the XP0111M00L package is a PN product process that utilizes high-performance bipolar transistors. This type of product process results in transistors with low conduction resistance and high switching speeds. The transistors also feature low gate-source capacitance and low-level noise characteristics that make them suitable for use in high-frequency application fields.
The main working principle of the XP0111M00L package is based on the three separate emitters in the array. These emitters are used to create a stable electric field between each emitter and the base terminal. The emitter of each transistor connects to the collector of the previous transistor and to the base terminal of the next transistor, thus allowing the current to flow through the different transistors without any voltage drops. This creates a stable voltage source that is useful in many high-speed switching applications.
The advantages of the XP0111M00L application field and working principle include its extremely low on-resistance and high switching speeds. Additionally, its relatively low gate-source capacitance makes the array suitable for use in high-frequency applications. Due to its low resistance and fast switching speed, the package is well-suited for switching power supplies, motor control circuits, and other applications where a stable voltage source is required.
The XP0111M00L application field and working principle is also versatile, making it suitable for use in a wide range of electronic applications. Because of its low power loss and high switching speeds, the package is often used in diode rectifier circuits, high-side switch configurations, and low-level noise sensitive applications. In addition, its low gate-source capacitance makes it appropriate for applications where high-frequency signals are present.
In summary, the XP0111M00L application field and working principle is categorized in the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This type of package is designed for use in pre-biased applications and features low conduction resistance and high switching speeds. Additionally, its relatively low gate-source capacitance makes the array suitable for use in high-frequency applications, making it an essential component for a wide range of circuit designs.
The specific data is subject to PDF, and the above content is for reference
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